BARRIER RECTIFIER. SBL4035CT Datasheet

SBL4035CT RECTIFIER. Datasheet pdf. Equivalent

SBL4035CT Datasheet
Recommendation SBL4035CT Datasheet
Part SBL4035CT
Description SCHOTTKY BARRIER RECTIFIER
Feature SBL4035CT; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Diodes SBL4030CT, .
Manufacture JIANGSU CHANGJIANG ELECTRONICS
Datasheet
Download SBL4035CT Datasheet




JIANGSU CHANGJIANG ELECTRONICS SBL4035CT
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
SBL4030CT, 35CT, 40CT, 45CT, 50CT, 60CT
SCHOTTKY BARRIER RECTIFIER
TO-220-3L
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
1. ANODE
2. CATHODE
3. ANODE
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
SBL
SBL
4030CT 4035CT
Value
SBL
SBL
4040CT 4045CT
SBL
4050CT
SBL
4060CT
VRRM
BDTICVRWM
Peak repetitive reverse voltage
Working peak reverse voltage
30 35 40 45 50 60
Unit
V
VR DC blocking voltage
VR(RMS) RMS reverse voltage
21 24.5 28 31.5 35
42
V
IO Average rectified output current
40 A
Non-Repetitive peak forward surge current
IFSM
8.3ms half sine wave
400
A
PD Power dissipation
2W
RΘJA Thermal resistance from junction to ambient
50
/W
Tj Junction temperature
125
Tstg Storage temperature
-55~+150
www.BDTIC.com/jcst
A,Nov,2010



JIANGSU CHANGJIANG ELECTRONICS SBL4035CT
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min Typ Max
Unit
SBL4030CT
30
SBL4035CT
35
Reverse voltage
V(BR)
SBL4040CT
SBL4045CT
IR=1mA
40
45
V
SBL4050CT
50
SBL4060CT
60
SBL4030CT
VR=30V
SBL4035CT
VR=35V
Reverse current
SBL4040CT
IR
SBL4045CT
VR=40V
VR=45V
1 mA
SBL4050CT
VR=50V
Forward voltage
BDTICTypicaltotalcapacitance
VF
Ctot
SBL4060CT
SBL4030CT-4045CT
SBL4050CT,4060CT
SBL4030CT-4060CT
VR=60V
IF=20A
VR=4V,f=1MHz
0.58
0.7
800
V
pF
www.BDTIC.com/jcst
A,Nov,2010







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