JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR2060FCT SCHOTTKY BARRIER RECTI...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR2060FCT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
TO-220F
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR DC blocking voltage
VR(RMS)
RMS reverse voltage
IO Average rectified output current
Non-Repetitive peak forward surge current IFSM
8.3ms half sine wave
PD Power dissipation
RΘJA
Thermal resistance from junction to ambient
Tj Junction temperature
Tstg Storage temperature
Value
60
42 20 150 2 50 125 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
V(BR)
IR=0.1mA
60
Reverse current
IR VR=60V
Forward voltage
VF IF=10A
Typical total capacitance
Ctot*
VR=4V,f=1MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Typ 650
Max
0.1 0.8
Unit
V
V A A W ℃/W ℃ ℃
Unit V mA V pF
A,Nov,2010
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