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MBR2060FCT

JIANGSU CHANGJIANG ELECTRONICS

SCHOTTKY BARRIER RECTIFIER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR2060FCT SCHOTTKY BARRIER RECTI...


JIANGSU CHANGJIANG ELECTRONICS

MBR2060FCT

File Download Download MBR2060FCT Datasheet


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR2060FCT SCHOTTKY BARRIER RECTIFIER FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency  High Surge Capability  High Current Capability and Low Forward Voltage Drop  For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications TO-220F 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage IO Average rectified output current Non-Repetitive peak forward surge current IFSM 8.3ms half sine wave PD Power dissipation RΘJA Thermal resistance from junction to ambient Tj Junction temperature Tstg Storage temperature Value 60 42 20 150 2 50 125 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse voltage V(BR) IR=0.1mA 60 Reverse current IR VR=60V Forward voltage VF IF=10A Typical total capacitance Ctot* VR=4V,f=1MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. Typ 650 Max 0.1 0.8 Unit V V A A W ℃/W ℃ ℃ Unit V mA V pF A,Nov,2010 ...




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