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MBR2060CT Dataheets PDF



Part Number MBR2060CT
Manufacturers ASEMI
Logo ASEMI
Description High-Voltage Schottky Diodes
Datasheet MBR2060CT DatasheetMBR2060CT Datasheet (PDF)

High-Voltage Schottky Diodes ■ Productor Character ● Half Bridge Rectified、Common Cathode Structure. ● Multilayer Metal -Silicon Potential Structure. ● Beautiful High Temperature Character. ● Have Over Voltage protect loop,high reliability. ● RoHs Product. MBR2060CT/MBR2060FCT ■Primary Use ● Low Voltage High Frequency Switching Power Supply. ● Low Voltage High Frequency Invers Circuit. ● Low Voltage Continued Circuit and Protection Circuit. ■Summarize ● MBR2060CT/MBR2060FCT Device optimized f.

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High-Voltage Schottky Diodes ■ Productor Character ● Half Bridge Rectified、Common Cathode Structure. ● Multilayer Metal -Silicon Potential Structure. ● Beautiful High Temperature Character. ● Have Over Voltage protect loop,high reliability. ● RoHs Product. MBR2060CT/MBR2060FCT ■Primary Use ● Low Voltage High Frequency Switching Power Supply. ● Low Voltage High Frequency Invers Circuit. ● Low Voltage Continued Circuit and Protection Circuit. ■Summarize ● MBR2060CT/MBR2060FCT Device optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply applications. Device Weight : ITO-220AB-1.48g TO-220AB-1.96g TO-263-1.78g PIN2 PIN3 Absolute Maximum Ratings Item Maximal Inverted Repetitive Peak Voltage *Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Typical Thermal Resistance (per leg) Package =TO-220AB/TO-263 Package =ITO-220AB Forward Peak Surge Current(Rated Load 8.3 Half Mssine Wave-According to JEDEC Method) Maximum Rate of Voltage Change ( at Rated VR ) Peak Repetitive Reverse Surge Current (2uS-1Khz) Operating Junction Temperature Storage Temperature Electricity Character Item Test Condition IR TJ =25℃ TJ =125℃ VR=VRRM VF TJ =25℃ TJ =125℃ IF=10A IF=10A *IF(AV)= 10A×2 TYP. 0.58 www.asemi88.com PIN1 Symbol VRRM IFAV RθJc IFSM dv/dt IRRM TJ TSTG Data 60 20 2 4 150 10000 1 -40- +150 -40- +150 Unit V A ℃/W ℃/W A V/uS A ℃ ℃ MAX. 20 2 0.63 0.51 Unit uA mA V V If, Instantaneous Forward Current (A) High-Voltage Schottky Diodes MBR2060CT/MBR2060FCT Characteristic Curves The forward voltage and forward current curve 20 18 16 14 125℃ 12 10 25℃ 8 6 If, Average Forward Current (A) Current derating curve, perelement 25 20 15 10 5 0 0 25 50 75 100 125 150 175 Tc, Case Temp (℃) The crunode capacitance curve 1000 Capacitance (pF) 4 100 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Vf, Instantaneous Forward Voltage (V) 10 1 10 Reverse Voltage (V) The reverse leak current and the reverse voltage (single-device) curve. 1000.0 100 100.0 125℃ Ir, Reverse Current (uA) 10.0 25℃ 1.0 0 10 20 30 40 50 60 VR, Reverse Voltage (V) www.asemi88.com High-Voltage Schottky Diodes Package Outline Dimensions TO-220 MBR2060CT/MBR2060FCT ITO-220 TO-263 www.asemi88.com High-Voltage Schottky Diodes Packing Information Part Number MBR2060CT MBR2060FCT Package TO-220/TO-263 ITO-220 MBR2060CT/MBR2060FCT Delivery Mode 50 pieces / tube 50 pieces / tube Part Number tube inner box outer container Marking MBR2060CT XXXX Quantity 50 pieces 1000 pieces 5000 pieces Size(mm) 530*33*7 560*150*40 580*230*170 1.ASEMI LOGO。 2.MBR2060CT。 3.XXXX,, (A,B,C⋯.,,⋯),, :2013,D/C3AXX。 4.ITO-220“F” www.asemi88.com High-Voltage Schottky Diodes Label (:125*32mm): MBR2060CT/MBR2060FCT PART NO: ; DATE CODE:; QTY:, ; :XXXXXXXX/3J43/1000/20130615001016 (:75*64mm): PART NO:; DATE:; QTY:。 1) ,;,。 2),,0.3/,。 3);,260℃,10S。 4) ,,5℃-25℃,50%,,,。 5) ,,,。 www.asemi88.com .


MBR2060FCT MBR2060CT MBR2060FCT


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