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1S1834

Toshiba Semiconductor

Silicon Rectifier

TOSHIBA Rectifier Silicon Diffused Type 1S1834,1S1835 1S1834,1S1835 High Speed Rectifier Applications (fast recovery) ...


Toshiba Semiconductor

1S1834

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Description
TOSHIBA Rectifier Silicon Diffused Type 1S1834,1S1835 1S1834,1S1835 High Speed Rectifier Applications (fast recovery) Unit: mm · Average Forward Current: IF (AV) = 1.0 A (Ta = 50°C) · Repetitive Peak Reverse Voltage: VRRM = 400, 600 V · Reverse Recovery Time: trr (1) = 1.5 µs trr (2) = 0.35 µs · Plastic Mold Type. Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage 1S1834 1S1835 Reverse voltage (DC) 1S1834 1S1835 Average forward current (Ta = 50°C) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range Symbol VRRM VR IF (AV) IFSM Tj Tstg Rating 400 600 300 500 1.0 60 (50 Hz) 66 (60 Hz) -40 to 125 -40 to 125 Electrical Characteristics (Ta = 25°C) Unit V V A A °C °C JEDEC DO-15 JEITA SC-39 TOSHIBA 3-3B1A Weight: 0.42 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage Repetitive peak reverse current Reverse recovery time Forward recovery voltage VFM IRRM (1) IRRM (2) trr (1) trr (2) Vfr IFM = 1.5 A VRRM = Rated VRRM = Rated, Tj = 125°C IF = 20 mA, IR = 1 mA IF = 20 mA, IR = 20 mA IF = 0.1 A, tr = 100 ns, tw = 5 ms ¾ ¾ 1.2 V ¾ ¾ 10 mA ¾ ¾ 500 ¾ ¾ 1.5 ms ¾ ¾ 0.35 ¾¾ 6 V Note 1: Lead diameter not controlled in this zone to allow for flash, lead finish build-up, and minor irregularities other than slugs. Note 2: Soldering: 5 mm is the minimum to be kept between case and soldering part. Note 3: Lead bending: 5 mm is the minimum to be kept from the ...




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