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MBR40100PT Dataheets PDF



Part Number MBR40100PT
Manufacturers Nell Semiconductors
Logo Nell Semiconductors
Description Dual Common Cathode High-Voltage Schottky Rectifier
Datasheet MBR40100PT DatasheetMBR40100PT Datasheet (PDF)

SEMICONDUCTOR MBR40100PT Series RRooHHSS Nell Semiconductors Dual Common Cathode High-Voltage Schottky Rectifier, 40A (20A x 2), 100V Available RoHS* COMPLIANT FEATURES 175°C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47.

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SEMICONDUCTOR MBR40100PT Series RRooHHSS Nell Semiconductors Dual Common Cathode High-Voltage Schottky Rectifier, 40A (20A x 2), 100V Available RoHS* COMPLIANT FEATURES 175°C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47 Solder bath temperature 260°C maximum, 40 s DESCRIPTION The MBR40100PT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. APPLICATIONS Switching mode power supplies DC to DC converters Freewheeling diodes Reverse battery protection. MECHANICAL DATA Case: TO-247AB (TO-3P) Molding compound meets UL 94 V-O flammability rating Terminals: Mat tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: As marked Mounting Torque: 10 in-lbs maximum 1 2 3 TO-247AB(MBR40100PT) CPAINS2E PIN 1 PIN 3 PRODUCT SUMMARY lF(AV) VR VF at lF=20 A at 125°C lRM max. TJ max. Diode variation EAS 20A x 2 100V 0.67V 6 mA at 125°C 175°C Dual dice 11.25 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL lF(AV) CHARACTERISTICS Rectangular waveform VRRM lFSM tp = 8.3ms, single half sine-wave VF 20 Apk, TJ = 125°C TJ Range VOLTAGE RATINGS SYMBOL PARAMETER VR Maximum DC reverse voltage VRWM Maximum working peak reverse voltage VDC Maximum DC blocking voltage VALUE 20 x 2 100 300 0.67 -65 to 175 VALUE 100 UNIT A V A V °C UNIT V www.nellsemi.com Page 1 of 4 SEMICONDUCTOR MBR40100PT Series RRooHHSS Nell Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum average forward current per device per diode lF(AV) 50% duty cycle at tc=144°C, rectangular waveform Non-repetitive peak surge current lFSM Surge applied at rated load condition half wave single phase 60 Hz VALUE UNIT 40 A 20 300 A Non-repetitive avalanche energy, per diode Repetitive avalanche current EAS TJ = 25°C, L = 5.6mH, IAS = 2A 11.25 mJ lAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.75 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum forward voltage drop V (1) FM IF = 20A IF = 40A IF = 20A IF = 40A TJ = 25°C TJ = 125°C Maximum instantaneous reverse current l (2) RM TJ = 25°C TJ = 125°C Rated DC voltage Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25°C Note (1) Pulse test : 300 µs pulse width, 1% duty cycle (2) Pulse test : Pulse width ≤ 40 ms TYP. 0.72 0.85 0.63 0.74 2.5 MAX. 0.80 0.90 0.67 0.8 0.1 6 UNIT V mA - 600 pF THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature range TJ Maximum storage temperature range Tstg TEST CONDITIONS Maximum thermal resistance, .


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