Document
SEMICONDUCTOR
MBR40100PT Series RRooHHSS
Nell Semiconductors
Dual Common Cathode High-Voltage Schottky Rectifier, 40A (20A x 2), 100V
Available
RoHS*
COMPLIANT
FEATURES
175°C TJ operation High frequency operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47 Solder bath temperature 260°C maximum, 40 s
DESCRIPTION
The MBR40100PT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature.
APPLICATIONS
Switching mode power supplies
DC to DC converters Freewheeling diodes Reverse battery protection.
MECHANICAL DATA
Case: TO-247AB (TO-3P) Molding compound meets UL 94 V-O flammability rating
Terminals: Mat tin plated leads, solderable per J-STD-002 and JESD 22-B102
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
1 2 3
TO-247AB(MBR40100PT)
CPAINS2E
PIN 1 PIN 3
PRODUCT SUMMARY
lF(AV) VR
VF at lF=20 A at 125°C lRM max. TJ max.
Diode variation EAS
20A x 2 100V 0.67V 6 mA at 125°C 175°C Dual dice 11.25 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL lF(AV)
CHARACTERISTICS Rectangular waveform
VRRM
lFSM
tp = 8.3ms, single half sine-wave
VF 20 Apk, TJ = 125°C
TJ Range
VOLTAGE RATINGS
SYMBOL
PARAMETER
VR Maximum DC reverse voltage
VRWM
Maximum working peak reverse voltage
VDC Maximum DC blocking voltage
VALUE 20 x 2 100 300 0.67 -65 to 175
VALUE
100
UNIT A V A V °C
UNIT
V
www.nellsemi.com
Page 1 of 4
SEMICONDUCTOR
MBR40100PT Series RRooHHSS
Nell Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
per device per diode
lF(AV)
50% duty cycle at tc=144°C, rectangular waveform
Non-repetitive peak surge current
lFSM
Surge applied at rated load condition half wave single phase 60 Hz
VALUE UNIT 40 A 20
300 A
Non-repetitive avalanche energy, per diode
Repetitive avalanche current
EAS TJ = 25°C, L = 5.6mH, IAS = 2A
11.25 mJ
lAR
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
0.75
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum forward voltage drop
V
(1) FM
IF = 20A IF = 40A IF = 20A IF = 40A
TJ = 25°C TJ = 125°C
Maximum instantaneous reverse current
l
(2) RM
TJ = 25°C TJ = 125°C
Rated DC voltage
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25°C
Note (1) Pulse test : 300 µs pulse width, 1% duty cycle
(2) Pulse test : Pulse width ≤ 40 ms
TYP. 0.72 0.85 0.63 0.74
2.5
MAX. 0.80 0.90 0.67 0.8 0.1
6
UNIT V mA
- 600 pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature range
TJ
Maximum storage temperature range
Tstg
TEST CONDITIONS
Maximum thermal resistance, .