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BAS40-04LT1G Data Sheet

Dual Series Schottky Barrier Diode

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BAS40-04LT1G
Dual Series Schottky Barrier Diode BAS40-04LT1G, SBAS40-04LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR 40 V PF 225 mW 1.8 mW/°C Operating Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range Forward Continuous Current IFM 120 mA Single Forward Current tv1s t v 10 ms IFSM mA 200 600 Thermal Resistance (Note 1) RqJA .
BAS40-04LT1G

Download BAS40-04LT1G Datasheet
Dual Series Schottky Barrier Diode BAS40-04LT1G, SBAS40-04LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR 40 V PF 225 mW 1.8 mW/°C Operating Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range Forward Continuous Current IFM 120 mA Single Forward Current tv1s t v 10 ms IFSM mA 200 600 Thermal Resistance (Note 1) RqJA 508 °C/W Junction−to−Ambient (Note 2) 311 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. DATA SHEET www.onsemi.com 40 VOLTS SCHOTTKY BARRIER DIODES SOT−23 (TO−236) CASE 318 STYLE 11 ANODE 1 CATHODE 2 3 CATHODE/ANODE MARKING DIAGRAM CB MG G 1 CB = Specific Device Code M =.


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