Document
Dual Series Schottky Barrier Diode
BAS40-04LT1G, SBAS40-04LT1G
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Features
• Extremely Fast Switching Speed • Low Forward Voltage • S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation @ TA = 25°C Derate above 25°C
VR
40
V
PF
225
mW
1.8
mW/°C
Operating Junction and Storage
TJ, Tstg
−55 to +150
°C
Temperature Range
Forward Continuous Current
IFM
120
mA
Single Forward Current tv1s t v 10 ms
IFSM
mA
200
600
Thermal Resistance (Note 1)
RqJA
508
°C/W
Junction−to−Ambient (Note 2)
311
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad.
DATA SHEET www.onsemi.com
40 VOLTS SCHOTTKY BARRIER DIODES
SOT−23 (TO−236) CASE 318 STYLE 11
ANODE 1
CATHODE 2
3 CATHODE/ANODE
MARKING DIAGRAM
CB MG G
1
CB = Specific Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location) *Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAS40−04LT1G SBAS40−04LT1G
SOT−23 (Pb−Free)
SOT−23 (Pb−Free)
3,000 / Tape & Reel
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1997
1
June, 2023 − Rev. 14
Publication Order Number: BAS40−04LT1/D
BAS40−04LT1G, SBAS40−04LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage (IR = 10 mA)
V(BR)R
V
40
−
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
pF
−
5.0
Reverse Leakage (VR = 25 V)
IR
mA
−
1.0
Forward Voltage (IF = 1.0 mA)
VF
mV
−
380
Forward Voltage (IF = 10 mA)
VF
mV
−
500
Forward Voltage (IF = 40 mA)
VF
V
−
1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (μA)
100
10
150°C 1.0 1 25°C
85°C 25°C
- 40°C - 55°C 0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
100 TA = 150°C
10 125°C
1.0 85°C
0.1
0.01 25°C
0.001
0
5.0
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current versus Reverse Voltage
CT, CAPACITANCE (pF)
3.5
3.0 2.5
2.0 1.5 1.0
0.5 0 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance
www.onsemi.com 2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 4:1
SOT−23 (TO−236) CASE 318 ISSUE AT
DATE 01 MAR 2023
GENERIC MARKING DIAGRAM*
XXXMG G
1
XXX = Specific Device Code M = Date Code G = Pb−Free Package
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER: 98ASB42226B DESCRIPTION: SOT−23 (TO−236)
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
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© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236) CASE 318 ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5: CANCELLED
STYLE 9: PIN 1. ANODE 2. ANODE 3. C.