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BAS40-04LT1G Dataheets PDF



Part Number BAS40-04LT1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual Series Schottky Barrier Diode
Datasheet BAS40-04LT1G DatasheetBAS40-04LT1G Datasheet (PDF)

Dual Series Schottky Barrier Diode BAS40-04LT1G, SBAS40-04LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage • S Prefix for Automotive and Other Applications Requiring Unique Site and Control C.

  BAS40-04LT1G   BAS40-04LT1G



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Dual Series Schottky Barrier Diode BAS40-04LT1G, SBAS40-04LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR 40 V PF 225 mW 1.8 mW/°C Operating Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range Forward Continuous Current IFM 120 mA Single Forward Current tv1s t v 10 ms IFSM mA 200 600 Thermal Resistance (Note 1) RqJA 508 °C/W Junction−to−Ambient (Note 2) 311 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. DATA SHEET www.onsemi.com 40 VOLTS SCHOTTKY BARRIER DIODES SOT−23 (TO−236) CASE 318 STYLE 11 ANODE 1 CATHODE 2 3 CATHODE/ANODE MARKING DIAGRAM CB MG G 1 CB = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAS40−04LT1G SBAS40−04LT1G SOT−23 (Pb−Free) SOT−23 (Pb−Free) 3,000 / Tape & Reel 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1997 1 June, 2023 − Rev. 14 Publication Order Number: BAS40−04LT1/D BAS40−04LT1G, SBAS40−04LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage (IR = 10 mA) V(BR)R V 40 − Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT pF − 5.0 Reverse Leakage (VR = 25 V) IR mA − 1.0 Forward Voltage (IF = 1.0 mA) VF mV − 380 Forward Voltage (IF = 10 mA) VF mV − 500 Forward Voltage (IF = 40 mA) VF V − 1.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (μA) 100 10 150°C 1.0 1 25°C 85°C 25°C - 40°C - 55°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 100 TA = 150°C 10 125°C 1.0 85°C 0.1 0.01 25°C 0.001 0 5.0 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current versus Reverse Voltage CT, CAPACITANCE (pF) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance www.onsemi.com 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SCALE 4:1 SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: 98ASB42226B DESCRIPTION: SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 9: PIN 1. ANODE 2. ANODE 3. C.


BAS40 BAS40-04LT1G SBAS40-04LT1G


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