Barrier Diode. BAS40-04LT1G Datasheet

BAS40-04LT1G Diode. Datasheet pdf. Equivalent

BAS40-04LT1G Datasheet
Recommendation BAS40-04LT1G Datasheet
Part BAS40-04LT1G
Description Dual Series Schottky Barrier Diode
Feature BAS40-04LT1G; BAS40-04LT1G, SBAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are de.
Manufacture ON Semiconductor
Datasheet
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ON Semiconductor BAS40-04LT1G
BAS40-04LT1G,
SBAS40-04LT1G
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
40
V
PF
225
mW
1.8
mW/°C
Operating Junction and Storage
TJ, Tstg
−55 to +150
°C
Temperature Range
Forward Continuous Current
IFM
120
mA
Single Forward Current
tv1s
t v 10 ms
IFSM
mA
200
600
Thermal Resistance (Note 1)
RqJA
508
°C/W
Junction−to−Ambient (Note 2)
311
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
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40 VOLTS
SCHOTTKY BARRIER DIODES
SOT−23 (TO−236)
CASE 318
STYLE 11
ANODE
1
CATHODE
2
3
CATHODE/ANODE
MARKING DIAGRAM
CB MG
G
1
CB = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAS40−04LT1G
SBAS40−04LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1997
1
March, 2018 − Rev. 13
Publication Order Number:
BAS40−04LT1/D



ON Semiconductor BAS40-04LT1G
BAS40−04LT1G, SBAS40−04LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
V
40
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
pF
5.0
Reverse Leakage
(VR = 25 V)
IR
mA
1.0
Forward Voltage
(IF = 1.0 mA)
VF
mV
380
Forward Voltage
(IF = 10 mA)
VF
mV
500
Forward Voltage
(IF = 40 mA)
VF
V
1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
100
10
150°C
1.0 1 25°C
85°C
25°C
- 40°C - 55°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
100
TA = 150°C
10 125°C
1.0 85°C
0.1
0.01 25°C
0.001
0
5.0
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current versus Reverse
Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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2



ON Semiconductor BAS40-04LT1G
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 4:1
D
3
E
1
2
e
TOP VIEW
A
A1
SIDE VIEW
SOT23 (TO236)
CASE 31808
ISSUE AS
DATE 30 JAN 2018
HE
3X b
0.25
T
L
L1
VIEW C
SEE VIEW C
c
END VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b
0.37
0.44
0.50
c
0.08
0.14
0.20
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e
1.78
1.90
2.04
L 0.30
0.43
0.55
L1 0.35
0.54
0.69
H E 2.10
T
0°
2.40
−−−
2.64
10°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
2.90
3X
0.90
XXX = Specific Device Code
M = Date Code
G = PbFree Package
3X 0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1 THRU 5:
CANCELLED
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODEANODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. ANODE
3. CATHODEANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
DOCUMENT NUMBER: 98ASB42226B
DESCRIPTION: SOT23 (TO236)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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