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1S1887

Toshiba Semiconductor

Silicon Rectifier

1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Silicon Diffused Type 1S1830,1S1885,1S1887,1S1888 General Purpose Rectifi...


Toshiba Semiconductor

1S1887

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Description
1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Silicon Diffused Type 1S1830,1S1885,1S1887,1S1888 General Purpose Rectifier Applications Unit: mm · Average Forward Current: IF (AV) = 1.0 A (Ta = 65°C) · Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V, 600 V, 1000 V Maximum Ratings (Ta = 25°C) Characteristics 1S1885 Repetitive peak reverse voltage 1S1887 1S1888 1S1830 Average forward current (Ta = 65°C) Peak one cycle surge forward current (non repetitive) 1S1830 1S1885 1S1887 1S1888 Junction temperature Storage temperature range Symbol VRRM IF (AV) IFSM Tj Tstg Rating 100 400 600 1000 1.0 45 (50 Hz) 49 (60 Hz) 60 (50 Hz) 66 (60 Hz) -40 to 150 -40 to 150 Electrical Characteristics (Ta = 25°C) Unit V A A °C °C JEDEC DO-15 JEITA SC-39 TOSHIBA 3-3B1A Weight: 0.42 g (typ.) Characteristics Peak forward voltage Repetitive peak reverse current Thermal resistance (junction to ambient) Symbol VFM IRRM (1) IRRM (2) Rth (j-a) Test Condition IFM = 1.5 A VRRM = Rated VRRM = Rated, Tj = 150°C DC Min Typ. Max Unit ¾ ¾ 1.2 V ¾ ¾ 10 mA ¾ ¾ 400 ¾ ¾ 100 °C/W Marking Type Code Lot No. 88 Month (starting from alphabet A) Cathode Mark Color: Silver Year (last number of the christian era) Code 30 85 87 88 Type 1S1830 1S1885 1S1887 1S1888 1 2001-11-14 Instantaneous forward current iF (A) 20 10 5.0 3.0 150 1.0 0.5 0.3 iF – vF Tj = 25°C 0.1 0.4 0.8 1.2 1.6 2.0 2.4 Instantaneous forward voltage vF (V) 2.8 5000 1000 rth (j-a) – t 100 10 1 0.1 0.001 0.0...




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