IGW40T120. G40T120 Datasheet

G40T120 IGW40T120. Datasheet pdf. Equivalent

G40T120 Datasheet
Recommendation G40T120 Datasheet
Part G40T120
Description IGW40T120
Feature G40T120; TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C  Short cir.
Manufacture Infineon Technologies
Datasheet
Download G40T120 Datasheet




Infineon Technologies G40T120
TrenchStop® Series
IGW40T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IGW40T120 1200V 40A
1.7V
150C G40T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
75
40
105
105
20
10
270
-40...+150
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov. 09



Infineon Technologies G40T120
TrenchStop® Series
IGW40T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
Max. Value
0.45
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Symbol
Conditions
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=1.5mA
VGE = 15V, IC=40A
Tj=25C
Tj=125C
Tj=150C
IC=1.5mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25C
Tj=150C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=40A
min.
1200
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.1
2.3
5.8
-
-
-
21
6
Unit
max.
-V
2.3
-
-
6.5
mA
0.4
4.0
600 nA
-S
Ω
Power Semiconductors
2
Rev. 2.4 Nov. 09



Infineon Technologies G40T120
TrenchStop® Series
IGW40T120
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=40A
VGE=15V
VGE=15V,tSC10s
VCC = 600V,
Tj = 25C
-
-
-
-
-
-
2500
130
110
203
13
210
- pF
-
-
- nC
- nH
-A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25C,
VCC=600V,IC=40A,
VGE=0/15V,
RG=15,
L2)=180nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
48
34
480
70
3.3
3.2
6.5
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150C
VCC=600V,IC=40A,
VGE=0/15V,
RG= 15,
L2)=180nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
52
40
580
120
5.0
5.4
10.4
Unit
max.
- ns
-
-
-
- mJ
-
-
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.4 Nov. 09







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