Fast Switching Diodes
LS4448.4148.914B
Features:
• Fast switching device (TRR<4.0nS). • Quadro mini-MELF package. • Surface device type mount...
Description
LS4448.4148.914B
Features:
Fast switching device (TRR<4.0nS). Quadro mini-MELF package. Surface device type mounting. Hermetically sealed glass. Compression bonded construction. All external surfaces are corrosion resistant and leads are readily solderable. RoHs compliant. Matte tin (Sn) lead finish. 1st band indicates cathode.
Maximum Ratings at Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
Power Dissipation Working Inverse Voltage Non-repetitive Peak Forward Current Average Rectified Current Peak Forward Surge Current Operating Junction Temperature Storage Temperature Range
Electrical Characteristics
Symbol
Pd WIV IFM IO IFSURGE TJ TSTG
Value
500 75 450 150 2 175 -65 to +200
Type Number
Symbol Minimum Maximum
Breakdown Voltage
IR=100uA IR=5uA
Forward Voltage LS4448, LS914B
LS4148
LS4448, LS914B
IF=5.0mA IF= 10mA IF =100mA
Reverse Leakage Current
VR=20V VR=75V
Junction Capacitance VR = 0, f = 1.0MHz
Reverse Recovery Time (Note 1)
BV
VF
IR Cj trr
100 75
-
0.62 0.72
- 1.0 - 1.0
-
25 5
4.0
-
Notes: 1. Reverse Recovery Test Conditions: IF = IR = 10mA, RL = 100Ω, IRR = 1mA.
Units mW
V mA A °C °C
Units
V
nA uA pF nS
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12/07/08 V1.1
LS4448.4148.914B
Ratings and Characteristic Curves (LS4448/LS4148/LS914B)
Forward Current vs. Forward Voltage
Forward Current vs. Forward Voltage
IF - Forward Current (mA)
IF - Foward Current (mA)
IF - Reverse Current (nA)
Va - Forward Volt...
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