Switching Diode. BAV20W Datasheet

BAV20W Diode. Datasheet pdf. Equivalent

BAV20W Datasheet
Recommendation BAV20W Datasheet
Part BAV20W
Description 250mW Surface Mount Switching Diode
Feature BAV20W; Pb RoHS COMPLIANCE BAV19W - BAV21W 250mW Surface Mount Switching Diode SOD-123 Features — Fast swi.
Manufacture Taiwan Semiconductor
Datasheet
Download BAV20W Datasheet




Taiwan Semiconductor BAV20W
Pb RoHS
COMPLIANCE
BAV19W - BAV21W
250mW Surface Mount Switching Diode
SOD-123
Features
— Fast switching speed
— Surface mount package ideally suited for
automatic insertion
— For general purpose switching applications
Mechanical Data
— Case: SOD-123, Molded plastic
— Terminals: Solderable per MIIL-STD-202,
Method 208
— Polarity: Cathode Band
— Marking: Date Code and Type Code or Date
Code only
— Type Code: BAV19W A8
BAV20W T2
BAV21W T3
— Weight: 0.01 grams (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol BAV19W BAV20W BAV21W Units
Repetitive Peak Reverse Voltage
VRRM 120 200 250 V
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR 100 150 200 V
RMS Reverse Voltage
VR(RMS)
71
106 141 V
Forward Continuous Current (Note 1)
IFM
400 mA
Average Rectifier Output Current (Note 1)
Io
200 mA
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S
IFSM
2.5 A
0.5
Repetitive Peak Forward Surge Current
IFRM
625 mA
Power Dissipation (Note 1)
Pd 250 mW
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
RθJA
TJ, TSTG
500
-65 to + 150
oC /W
oC
Type Number
Symbol
Min
Max
Units
Forward Voltage (Note 3)
Peak Reverse Current (Note 3)
IF=100mA
IF=200mA
Tj=25 oC
Tj=100 oC
Junction Capacitance VR=0, f=1.0MHz
Reverse Recovery Time (Note 2)
VF
IR
Cj
trr
1.0
- 1.25 V
- 100 nA
15 uA
- 5.0 pF
- 50 nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100.
3. Short Duration Pulse Test used to Minimize Self-Heating Effect.
:
Version: A07



Taiwan Semiconductor BAV20W
RATINGS AND CHARACTERISTIC CURVES (BAV19W THRU BAV21W)
FIG.1- FORWARD CHAPACTERISTICS
1000
100
Tj =20OC
FIG.2- LEAKAGE CURRENT VS
JUNCTION TEMPERATURE
100
10
10
1
1
0.1
0.1
0.01
0
12
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.01
0
100
Tj, JUNCTION TEMPERATURE ( C)
200
FIG.3- ADMISSIBLE POWER DISSIPATION VS
AMBIENT TEMPERATURE
mW
250
200
150
Pd
100
50
0
0
100
Tamb
200OC
Version: A07







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