SILICON EPITAXIAL PLANAR DIODE
UNISONIC TECHNOLOGIES CO., LTD
BAV20W
Preliminary
DIODE
SILICON EPITAXIAL PLANAR DIODE
DESCRIPTION
The UTC BAV20W ...
Description
UNISONIC TECHNOLOGIES CO., LTD
BAV20W
Preliminary
DIODE
SILICON EPITAXIAL PLANAR DIODE
DESCRIPTION
The UTC BAV20W is a silicon epitaxial planar diode. The UTC BAV20W is suitable for general purpose application.
FEATURES
* Planar diode * For general purpose application * Low leakage current
1 2
SOD-123
1 2
SOD-323
ORDERING INFORMATION
Ordering Number
BAV20WG-CA2-R BAV20WG-CB2-R Note: Pin Assignment: A: Anode K: Cathode
Package
SOD-123 SOD-323
Pin Assignment 12 KA KA
Packing
Tape Reel Tape Reel
BAV20WG-CA2-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type (3)Green Package
(2) CA2: SOD-123, CB2: SOD-323 (3) G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-205.b
BAV20W
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Reverse Voltage Continuous Reverse Voltage
VRRM VR
200 150
V V
Forward DC Current at TA=25°C (Note 2) Rectified Current (Average) Half Wave Rectification with Resist. Load at TA=25°C (Note 2)
IF IO
250 mA 200 mA
Repetitive Peak Forward Current at f>50Hz, TA=25°C (Note 2)
IFRM
625
mA
Surge Forward Current at t<1s, TJ=25°C
IFSM
1.0
A
Power Dissipation at TA=25°C (Note 2) Junction Temperature
PD 410 mW
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratin...
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