Signal Diodes. 1N4448WS Datasheet

1N4448WS Diodes. Datasheet pdf. Equivalent

1N4448WS Datasheet
Recommendation 1N4448WS Datasheet
Part 1N4448WS
Description Small Signal Diodes
Feature 1N4448WS; 1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes March 2015 1N4148WS / 1N4448WS / 1N914BWS Sma.
Manufacture Fairchild Semiconductor
Datasheet
Download 1N4448WS Datasheet




Fairchild Semiconductor 1N4448WS
March 2015
1N4148WS / 1N4448WS / 1N914BWS
Small Signal Diodes
Features
• General Purpose Diodes
• Fast Switching Device (TRR < 4.0 ns)
• Very Small and Thin SMD Package
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
2
1
SOD-323 Flat Lead
Band Indicates Cathode
1. Cathode
2. Anode
ELECTRICAL SYMBOL
Ordering Information
Part Number
1N4148WS
1N4448WS
1N914BWS
Top Mark
S1
S2
S3
Package
SOD-323F 2L
SOD-323F 2L
SOD-323F 2L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VRSM
VRRM
IFRM
IO
TJ
TSTG
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Continuous Forward Current
Operating Junction Temperature
Storage Temperature Range
100
75
300
150
+150
-55 to +150
V
V
mA
mA
°C
°C
© 2008 Fairchild Semiconductor Corporation
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.2
www.fairchildsemi.com



Fairchild Semiconductor 1N4448WS
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJA
Power Dissipation (TC = 25°C)
Thermal Resistance, Junction-to-Ambient(1)
Note:
1. Device mounted on FR-4 PCB minimum land pad.
Value
200
500
Unit
mW
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BVR Breakdown Voltage
IR = 100 μA
IR = 5 μA
IR Reverse Current
VR = 20 V
VR = 75 V
1N4448WS / 1N914BWS IF = 5 mA
VF Forward Voltage 1N4148WS
IF = 10 mA
1N4448WS / 1N914BWS IF = 100 mA
CO Diode Capacitance
VR = 0, f = 1.0 MHz
TRR Reverse Recovery Time
IF = 10 mA, IR = 60 mA,
IRR = 1 mA, RL = 100 Ω
Min.
100
75
0.62
Max.
25
5
0.72
1
1
4
4
Unit
V
nA
μA
V
pF
ns
© 2008 Fairchild Semiconductor Corporation
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.2
2
www.fairchildsemi.com



Fairchild Semiconductor 1N4448WS
Typical Performance Characteristics
0.58
0.56
0.54
0.52
0.50
0.48
0.46
0.44
0
TA=25°C
2 4 6 8 10 12
Reverse Voltage (V)
Figure 1. Total Capacitance
14
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
T = -40oC
A
T = 25oC
A
T = 85oC
A
T = 150oC
A
0.1 1 10 100
Forward Current, I [mA]
F
1000
Figure 2. Forward Voltage vs. Ambient Temperature
250
200
150
100
50
0
0 25 50 75 100 125 150
Temperature [°C]
Figure 3. Power Derating Curve
175
105
104 Ta=150°C
103
102
Ta=25°C
101
100
Ta=-40°C
10-1
10 20 30 40 50 60 70 80 90 100
Reverse Voltage, VR[V]
Figure 4. Reverse Current vs. Reverse Voltage
170
Ta=25°C
160
150
140
1
10
Reverse Current, IR[µA]
100
Figure 5. Reverse Voltage vs. Reverse Current
© 2008 Fairchild Semiconductor Corporation
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.2
3
www.fairchildsemi.com







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