Switching Diode. 1N4148WS Datasheet

1N4148WS Diode. Datasheet pdf. Equivalent

1N4148WS Datasheet
Recommendation 1N4148WS Datasheet
Part 1N4148WS
Description Small Signal Fast Switching Diode
Feature 1N4148WS; www.vishay.com 1N4148WS Vishay Semiconductors Small Signal Fast Switching Diode MARKING (example .
Manufacture Vishay
Datasheet
Download 1N4148WS Datasheet




Vishay 1N4148WS
www.vishay.com
1N4148WS
Vishay Semiconductors
Small Signal Fast Switching Diode
MARKING (example only)
XY
Bar = cathode marking
XY = type code
22610
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
1N4148WS
1N4148WS-E3-08 or 1N4148WS-E3-18
1N4148WS-HE3-08 or 1N4148WS-HE3-18
CIRCUIT CONFIGURATION
Single
TYPE MARKING
A2
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load (1)
f 50 Hz
VR
VRRM
IF(AV)
Surge forward current
Power dissipation (1)
t < 1 s and Tj = 25 °C
IFSM
Ptot
Note
(1) Valid provided that electrodes are kept at ambient temperature.
VALUE
75
100
150
350
200
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
650
150
-65 to +150
-55 to +150
UNIT
V
mA
mW
UNIT
K/W
°C
°C
°C
Rev. 2.3, 06-Jul-17
1 Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay 1N4148WS
www.vishay.com
1N4148WS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Leakage current
Diode capacitance
Voltage rise when switching ON
Reverse recovery time
IF = 10 mA
IF = 100 mA
VR = 20 V
VR = 75 V
VR = 100 V
VR = 20 V, Tj = 150 °C
VF = VR = 0 V
Tested with 50 mA pulses,
tp = 0.1 μs, rise time < 30 ns,
fp = (5 to 100) kHz
IF = 10 mA, iR = 1 mA, VR = 6 V,
RL = 100 Ω
VF
VF
IR
IR
IR
IR
CD
Vfr
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103 250
MAX.
1
1.2
25
5
100
50
4
2.5
4
UNIT
V
V
nA
μA
pF
V
ns
102
Tj = 100 °C
Tj = 25 °C
10
200
150
1 100
10-1 50
10-2
0
17437
1
VF (V)
Fig. 1 - Forward Characteristics
2
0
0
20324
50 100 150 200
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
5 Tj = 25 °C
f = 1 kHz
2
103
5
2
102
5
2
10
5
2
17438
10-2
10-1 1
10
IF (mA)
102
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
1.1 Tj = 25 °C
f = 1 MHz
1.0
0.9
0.8
0.7
0 2 4 6 8 10
17440
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 2.3, 06-Jul-17
2 Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay 1N4148WS
www.vishay.com
1N4148WS
Vishay Semiconductors
104
5
2
103
5
2
102
5
2
10
5
2
1
17441
0
VR = 20 V
100
Tj (°C)
200
Fig. 5 - Leakage Current vs. Junction Temperature
100
5
4
3
2
10
5
4 0.1
3
2 0.2
1 0.5
5
4
3
2
0.1
10-5
2
17442
n=0
I
n = t /T T = 1/f
PP
I
FRM
t
P
T
t
5 10-4
2
5 10-3
2
5 10-2
tP (s)
2
5 10-1
2
51
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
2
5 10
Rev. 2.3, 06-Jul-17
3 Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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