Switching Diode. 1N4148WS Datasheet

1N4148WS Diode. Datasheet pdf. Equivalent

1N4148WS Datasheet
Recommendation 1N4148WS Datasheet
Part 1N4148WS
Description 200mW High Speed SMD Switching Diode
Feature 1N4148WS; 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Product Features ◇ Fa.
Manufacture Taiwan Semiconductor
Datasheet
Download 1N4148WS Datasheet




Taiwan Semiconductor 1N4148WS
1N4148WS/1N4448WS/1N914BWS
200mW High Speed SMD Switching Diode
Small Signal Product
Features
Fast switching device(Trr<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
Case : Flat lead SOD-323F small outline plastic package
Terminal : Matte tin plated, solderable
per MIL-STD-202, method 208 guaranteed
High temperature soldering guaranteed : 260°C/10s
Polarity : Indicated by cathode band
Weight : 4.85 ± 0.5 mg
Marking Code : S1, S2, S3
Ordering Information (example)
SOD-323F
Part No.
Package
Packing
Packing code
1N4148WS
SOD-323F
3K / 7" Reel
RR
Note : Detail please see "Ordering Information(detail, example)" below.
Packing code
(Green)
RRG
Manufacture code
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Reverse Voltage
Non-Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
Symbol
PD
VRM
VRRM
VR
IFRM
IO
RθJA
TJ , TSTG
Value
200
100
75
100
300
150
625
-65 to + 150
Units
mW
V
V
V
mA
mA
oC/W
oC
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
IR=100µA
IR=5µA
Forward Voltage
1N4448WS, 1N914BWS
IF=5.0mA
1N4148WS
1N4448WS, 1N914BWS
Reverse Leakage Current
IF=10.0mA
IF=100.0mA
VR=20V
VR=75V
Junction Capacitance
Reverse Recovery Time
VR=0, f=1.0MHz
IF=10mA, IR=60mA, RL=100, IRR=1mA
Symbol
V(BR)
VF
IR
CJ
Trr
Min
100
75
0.62
-
-
-
-
-
-
Max
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
Units
V
V
nA
µA
pF
ns
Version : G14



Taiwan Semiconductor 1N4148WS
Small Signal Product
RATINGS AND CHARACTERISTIC CURVES
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.01
Fig. 1 Forward Voltage VS. Forward Current
25°C
125°C
0.1 1 10 100
Forward Current (mA)
1000
Fig. 2 Reverse Current vs Reverse Voltage
100
10
Ta=25°C
1
0.1
0.01
0
20 40 60 80 100 120
Reverse Volatge (V)
Fig. 3 Admissible Power Dissipation Curve
250
200
VR=0V
Tj=25°C
f=1MHz
150
100
50
0
0 25 50 75 100 125 150 175
Ambient Temperature (°C)
Fig. 4 Typical Junction Capacitance
1.2
1.1
1
0.9
0.8
0.7
0.6
0 1 2 3 4 5 6 7 8 9 10
Reverse Voltage (V)
Version : G14



Taiwan Semiconductor 1N4148WS
Small Signal Product
Ordering information (Detail, example)
Part No.
Package
Packing
Packing code
1NxxxxWS
(Note 1)
SOD-323
3K / 7" Reel
3K / 7" Reel
RR
RQ
1N4148WS
SOD-323
3K / 7" Reel
RR
1N4148WS
SOD-323
3K / 7" Reel
RR
Note 1 : "xxxx" is Device Code from "4148" to "914B".
Note 2 : Manufacture special control, if empty means no special control requirement.
Tape & Reel specification
Packing code
(Green)
RRG
RQG
RRG
RRG
Manufacture code
(Note 2)
Item
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocket hole position
Punch hole position
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
K
D
A
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
2.40 Max.
1.5 ± 0.1
178 ± 1
50 Min.
13.0 ± 0.5
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.10
0.6 Max.
8.30 Max.
14.4 Max
Note 1 : A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity.
Note 2 : If B1 exceeds 4.2mm(0.165") for 8 mm embossed tape, the tape may not feed through all tape feeders.
Version : G14







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