Switching Diode. 1N4148W Datasheet

1N4148W Diode. Datasheet pdf. Equivalent

1N4148W Datasheet
Recommendation 1N4148W Datasheet
Part 1N4148W
Description 400mW High Speed SMD Switching Diode
Feature 1N4148W; Small Signal Diode 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode SOD-123F B Feature.
Manufacture Taiwan Semiconductor
Datasheet
Download 1N4148W Datasheet




Taiwan Semiconductor 1N4148W
Small Signal Product
1N4148W/1N4448W/1N914BW
Taiwan Semiconductor
400mW High Speed SMD Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface Mount Device Type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-123F
MECHANICAL DATA
- Case: Flat lead SOD-123F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 8.85 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 400
Reverse Voltage
VR 100
Repetitive Peak Reverse Voltage
VRRM
75
Repetitive Peak Forward Current
IFRM
300
Forward Current
IF 150
Thermal Resistance (Junction to Ambient) (Note 1)
RθJA
450
Junction and Storage Temperature Range
TJ , TSTG
-65 to +150
PARAMETER
SYMBOL
Reverse Voltage
IR=100μA
IR=5μA
VR
Forward Voltage
1N4448W, 1N914BW
1N4148W
1N4448W, 1N914BW
Reverse Leakage Current
IF=5.0mA
IF=10.0mA
IF=100.0mA
VR=20V
VR=75V
VF
IR
Junction Capacitance
Reverse Recovery Time
VR=0, f=1.0MHz
(Note 2)
CJ
trr
Notes 1: Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load
Notes 2: Reverse Recovery Test Conditions : IF=10mA, IR=60mA, RL=100, IRR=1mA
MIN
100
75
0.62
-
-
-
-
-
-
MAX
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
UNIT
mW
V
V
mA
mA
oC/W
oC
UNIT
V
V
nA
μA
pF
ns
Document Number: DS_S1412035
Version: I14



Taiwan Semiconductor 1N4148W
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
100
10
1
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Instantaneous Forward Volatge (V)
Fig. 3 Admissible Power Dissipation
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
1N4148W/1N4448W/1N914BW
Taiwan Semiconductor
Fig. 2 Reverse Current vs Reverse Voltage
100
10
1
0.1
0.01
0
20 40 60 80 100 120
Reverse Volatge (V)
Fig. 4 Typical Junction Capacitance
6
5
4
3
2
1
0
0 2 4 6 8 10
Reverse Voltage (V)
10000
Fig. 5 Forward Resistance vs. Forward Current
1000
100
10
1
0.01
0.1 1 10
Forward Current (mA)
Document Number: DS_S1412035
100
Version: I14



Taiwan Semiconductor 1N4148W
Small Signal Product
1N4148W/1N4448W/1N914BW
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
1NxxxxW
(Note 1)
PART NO.
SUFFIX
-xx
(Note 2)
PACKING CODE
RH
PACKING CODE
SUFFIX
G
Note 1: "xxxx" is device code from 1N4148W to 1N914BW
Note 2: Part No. Suffix „-xx “ would be used for special requirement
EXAMPLE
PREFERRED P/N
1N4148W RH
PART NO.
1N4148W
PART NO.
SUFFIX
PACKING CODE
RH
1N4148W RHG
1N4148W
RH
1N4148W-B0 RHG
1N4148W
-B0
RH
1N4148W-L0 RHG
1N4148W
-L0
RH
PACKAGE
SOD-123F
PACKING
3K / 7" Reel
PACKING CODE
SUFFIX
G
G
G
DESCRIPTION
Multiple manufacture
source
Multiple manufacture
source
Green compound
Defined manufacture
source
Green compound
Defined manufacture
source
Green compound
PACKAGE OUTLINE DIMENSIONS
SOD-123F
DIM.
A
B
C
D
E
F
Unit (mm)
Min
1.50
3.30
0.50
2.50
0.80
0.05
Max
1.70
3.90
0.70
2.70
1.15
0.20
Unit (inch)
Min
0.059
0.130
Max
0.067
0.154
0.020 0.028
0.098 0.106
0.031 0.045
0.002 0.008
SUGGEST PAD LAYOUT
MARKING CODE
1N4148W
1N4448W
1N914BW
D1
D2
D3
Document Number: DS_S1412035
DIM.
C
G
X
X1
Y
Unit (mm)
Typ.
2.86
1.52
1.34
4.20
1.80
Unit (inch)
Typ.
0.113
0.060
0.053
0.165
0.071
Version: I14







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)