Silicon Epitaxial Planar Diode
Production specification
Silicon Epitaxial Planar Diode
FEATURES
z Fast Switching Speed:trr=4ns(Typ) z Surface Mount P...
Description
Production specification
Silicon Epitaxial Planar Diode
FEATURES
z Fast Switching Speed:trr=4ns(Typ) z Surface Mount Package Ideally Suited For
Pb
Lead-free
Automatic Insertion
z For General Purpose Switching Applications
z High Conductance
z Available in Lead Free Version
BAV16WS
APPLICATIONS
z Surface mount fast switching diode
ORDERING INFORMATION
Type No.
Marking
BAV16WS
T6
SOD-323
Package Code SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=1.0 μs
@t=1.0 s
VRM VRRM VRWM VR VR(RMS) Io IFSM
Power Dissipation Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Rage
Pd RθJA Tj,TSTG
Value 100 75
53 150 2.0 1.0 200 625 -65 to +150
Unit V V
V mA A
mW ℃/W ℃
B017 Rev.A
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Production specification
Silicon Epitaxial Planar Diode
BAV16WS
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic Reverse Breakdown Voltage Forward Voltage
Symbol V(BR)R VF
Reverse Current
Capacitance between terminals Reverse Recovery Time
IR CT trr
Min Max Unit
75 -
V
- 0.715 V
0.855
1.0
1.25
- 1.0 μA
25 nA
- 2.0 pF
- 4.0 ns
Test Condition IR=1.0μA IF=1.0mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V VR=0,f=1.0MHz
IF=IR=10mA, Irr=0.1×IR,RL=100Ω
TYPICAL CHAR...
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