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BAV16WS

GME

Silicon Epitaxial Planar Diode

Production specification Silicon Epitaxial Planar Diode FEATURES z Fast Switching Speed:trr=4ns(Typ) z Surface Mount P...


GME

BAV16WS

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Production specification Silicon Epitaxial Planar Diode FEATURES z Fast Switching Speed:trr=4ns(Typ) z Surface Mount Package Ideally Suited For Pb Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance z Available in Lead Free Version BAV16WS APPLICATIONS z Surface mount fast switching diode ORDERING INFORMATION Type No. Marking BAV16WS T6 SOD-323 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=1.0 μs @t=1.0 s VRM VRRM VRWM VR VR(RMS) Io IFSM Power Dissipation Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Rage Pd RθJA Tj,TSTG Value 100 75 53 150 2.0 1.0 200 625 -65 to +150 Unit V V V mA A mW ℃/W ℃ B017 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Diode BAV16WS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF Reverse Current Capacitance between terminals Reverse Recovery Time IR CT trr Min Max Unit 75 - V - 0.715 V 0.855 1.0 1.25 - 1.0 μA 25 nA - 2.0 pF - 4.0 ns Test Condition IR=1.0μA IF=1.0mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V VR=0,f=1.0MHz IF=IR=10mA, Irr=0.1×IR,RL=100Ω TYPICAL CHAR...




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