Switching Diodes. BAV20WS Datasheet

BAV20WS Diodes. Datasheet pdf. Equivalent

BAV20WS Datasheet
Recommendation BAV20WS Datasheet
Part BAV20WS
Description Small Signal Switching Diodes
Feature BAV20WS; www.vishay.com BAV19WS, BAV20WS, BAV21WS Vishay Semiconductors Small Signal Switching Diodes, High.
Manufacture Vishay
Datasheet
Download BAV20WS Datasheet




Vishay BAV20WS
www.vishay.com
BAV19WS, BAV20WS, BAV21WS
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
TYPE
DIFFERENTIATION
BAV19WS
VR = 100 V
BAV20WS
VR = 150 V
BAV21WS
VR = 200 V
ORDERING CODE
BAV19WS-E3-08 or BAV19WS-E3-18
BAV19WS-HE3-08 or BAV19WS-HE3-18
BAV20WS-E3-08 or BAV20WS-E3-18
BAV20WS-HE3-08 or BAV20WS-HE3-18
BAV21WS-E3-08 or BAV21WS-E3-18
BAV21WS-HE3-08 or BAV21WS-HE3-18
TYPE MARKING
A8
A9
AA
CIRCUIT
CONFIGURATION
Single
Single
Single
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Continuous reverse voltage
Repetitive peak reverse voltage
Forward continuous current (1)
Rectified current (average) half wave
rectification with resistive load (1)
Repetitive peak forward current (1)
Surge forward current
Power dissipation
f 50 Hz, θ = 180°
t < 1 s, TJ = 25 °C
BAV19WS
BAV20WS
BAV21WS
BAV19WS
BAV20WS
BAV21WS
VR
VR
VR
VRRM
VRRM
VRRM
IF
IF(AV)
IFRM
IFSM
Ptot
Note
(1) Valid provided that leads are kept at ambient temperature
VALUE
100
150
200
120
200
250
250
200
625
1
200
UNIT
V
V
V
V
V
V
mA
mA
mA
A
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
Thermal resistance junction to lead
Junction temperature
Storage temperature range
Operating temperature range
RthJA
RthJL
Tj
Tstg
Top
VALUE
625
450
150
-65 to +150
-55 to +150
UNIT
K/W
K/W
°C
°C
°C
Rev. 2.2, 12-Jul-17
1 Document Number: 85726
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay BAV20WS
www.vishay.com
BAV19WS, BAV20WS, BAV21WS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Forward voltage
Reverse leakage current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
IF = 100 mA
IF = 200 mA
VR = 100 V
VR = 100 V, TJ = 100 °C
VR = 150 V
VR = 150 V, TJ = 100 °C
VR = 200 V
VR = 200 V, TJ = 100 °C
IF = 10 mA
VR = 0, f = 1 MHz
IF = 30 mA, IR = 30 mA,
iR = 3 mA, RL = 100 Ω
BAV19WS
BAV19WS
BAV20WS
BAV20WS
BAV21WS
BAV21WS
VF
VF
IR
IR
IR
IR
IR
IR
rf
CD
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
5
MAX.
1
1.25
100
15
100
15
100
15
1.5
50
UNIT
V
V
nA
μA
nA
μA
nA
μA
Ω
pF
ns
1000
100
Tj = 100 °C
10 25 °C
1
0.1
0.01
0
18858
0.2 0.4 0.6 0.8
VF - Forward Voltage (V)
1
Fig. 1 - Forward Current vs. Forward Voltage
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
18864
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
0.3 100
0.2
DC current IF
Current (rectif.) IO
0.1
0
0
18859
30 60
90 120 150
Tamb - Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
10
1
1
18861
10
IF - Forward Current (mA)
100
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 2.2, 12-Jul-17
2 Document Number: 85726
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay BAV20WS
www.vishay.com
BAV19WS, BAV20WS, BAV21WS
Vishay Semiconductors
1000
100
10
1
0.1
0
18862_3
Reverse Voltage
BAV19WS VR = 100 V
BAV20WS VR = 150 V
BAV21WS VR = 200 V
40 80 120 160
Tj - Junction Temperature (°C)
200
Fig. 5 - Leakage Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
18863
Tj = 25 ° C
1 10
VR - Reverse Voltage (V)
100
Fig. 6 - Capacitance vs. Reverse Voltage
0.40 [0.016]
0.25 [0.010]
Cathode bar
1.95 [0.077]
1.60 [0.063]
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031]
0.8 [0.031]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
1.6 [0.063]
Rev. 2.2, 12-Jul-17
3 Document Number: 85726
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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