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BAV19WS, BAV20WS, BAV21WS
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
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Models
Available
MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box
FEATURES • Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PARTS TABLE
PART
TYPE DIFFERENTIATION
BAV19WS
VR = 100 V
BAV20WS
VR = 150 V
BAV21WS
VR = 200 V
ORDERING CODE
BAV19WS-E3-08 or BAV19WS-E3-18 BAV19WS-HE3-08 or BAV19WS-HE3-18
BAV20WS-E3-08 or BAV20WS-E3-18 BAV20WS-HE3-08 or BAV20WS-HE3-18
BAV21WS-E3-08 or BAV21WS-E3-18 BAV21WS-HE3-08 or BAV21WS-HE3-18
TYPE MARKING A8 A9 AA
CIRCUIT CONFIGURATION
Single
Single
Single
REMARKS Tape and reel Tape and reel Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Continuous reverse voltage
Repetitive peak reverse voltage
Forward continuous current (1) Rectified current (average) half wave rectification with resistive load (1) Repetitive peak forward current (1) Surge forward current Power dissipation
f ≥ 50 Hz, θ = 180° t < 1 s, TJ = 25 °C
BAV19WS BAV20WS BAV21WS BAV19WS BAV20WS BAV21WS
VR VR VR VRRM VRRM VRRM IF
IF(AV)
IFRM IFSM Ptot
Note (1) Valid provided that leads are kept at ambient temperature
VALUE 100 150 200 120 200 250 250
200
625 1
200
UNIT V V V V V V mA
mA
mA A mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air Thermal resistance junction to lead Junction temperature Storage temperature range Operating temperature range
RthJA RthJL
Tj Tstg Top
VALUE 625 450 150
-65 to +150 -55 to +150
UNIT K/W K/W °C °C °C
Rev. 2.2, 12-Jul-17
1 Document Number: 85726
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAV19WS, BAV20WS, BAV21WS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Forward voltage
Reverse leakage current
Dynamic forward resistance Diode capacitance Reverse recovery time
IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, TJ = 100 °C VR = 150 V VR = 150 V, TJ = 100 °C VR = 200 V VR = 200 V, TJ = 100 °C IF = 10 mA VR = 0, f = 1 MHz IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 Ω
BAV19WS BAV19WS BAV20WS BAV20WS BAV21WS BAV21WS
VF VF IR IR IR IR IR IR rf CD
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP. 5
MAX. 1
1.25 100 15 100 15 100 15
1.5
50
UNIT V V nA μA nA μA nA μA Ω pF
ns
I F - Forward Current (mA)
1000 100
Tj = 100 °C
10 25 °C 1
0.1
0.01 0
18858
0.2 0.4 0.6 0.8 VF - Forward Voltage (V)
1
Fig. 1 - Forward Current vs. Forward Voltage
Ptot - Admissible Power Dissipation (mW)
250
200
150
100 50
0 0 20 40 60 80 100 120 140 160 180 200
18864
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
0.3 100
rf - Dynamic Forward Resistance (Ω)
IO , I F - Admissible Forward Current (A)
0.2 DC current IF
Current (rectif.) IO 0.1
0 0
18859
30 60
90 120 150
Tamb - Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
10
1 1
18861
10 IF - Forward Current (mA)
100
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 2.2, 12-Jul-17
2 Document Number: 85726
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAV19WS, BAV20WS, BAV21WS
Vishay Semiconductors
1000
IR(Tj)/IR (25 °C) - Leakage Current
100
10
1
0.1 0
18862_3
Reverse Voltage BAV19WS VR = 100 V BAV20WS VR = 150 V BAV21WS VR = 200 V
40 80 120 160 Tj - Junction Temperature (°C)
200
Fig. 5 - Leakage Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
CD - Diode Capacitance (pF)
2.0 1.8 1.6
1.4 1.2
1.0 0.8 0.6 0.4 0.2
0 0.1
18863
Tj = 25 ° C
1 10 VR - Reverse Voltage (V)
100
Fig. 6 - Capacitance vs. Reverse Voltage
0.15 [0.006] 0.10 [0.004] 0° - 8° 0.1 [0.004] max.
1.15 [0.045] 0.8 [0.031] 0.2 [0.008]
0.40 [0.016] 0.25 [0.010]
Cathode bar
1.95 [0.077] 1.60 [0.063]
1.5 [0.059] 1.1 [0.043]
0.40 [0.016] 0.20 [0.008]
2.85 [0..