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BAV20WS Dataheets PDF



Part Number BAV20WS
Manufacturers Vishay
Logo Vishay
Description Small Signal Switching Diodes
Datasheet BAV20WS DatasheetBAV20WS Datasheet (PDF)

www.vishay.com BAV19WS, BAV20WS, BAV21WS Vishay Semiconductors Small Signal Switching Diodes, High Voltage DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoH.

  BAV20WS   BAV20WS


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www.vishay.com BAV19WS, BAV20WS, BAV21WS Vishay Semiconductors Small Signal Switching Diodes, High Voltage DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PARTS TABLE PART TYPE DIFFERENTIATION BAV19WS VR = 100 V BAV20WS VR = 150 V BAV21WS VR = 200 V ORDERING CODE BAV19WS-E3-08 or BAV19WS-E3-18 BAV19WS-HE3-08 or BAV19WS-HE3-18 BAV20WS-E3-08 or BAV20WS-E3-18 BAV20WS-HE3-08 or BAV20WS-HE3-18 BAV21WS-E3-08 or BAV21WS-E3-18 BAV21WS-HE3-08 or BAV21WS-HE3-18 TYPE MARKING A8 A9 AA CIRCUIT CONFIGURATION Single Single Single REMARKS Tape and reel Tape and reel Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Continuous reverse voltage Repetitive peak reverse voltage Forward continuous current (1) Rectified current (average) half wave rectification with resistive load (1) Repetitive peak forward current (1) Surge forward current Power dissipation f ≥ 50 Hz, θ = 180° t < 1 s, TJ = 25 °C BAV19WS BAV20WS BAV21WS BAV19WS BAV20WS BAV21WS VR VR VR VRRM VRRM VRRM IF IF(AV) IFRM IFSM Ptot Note (1) Valid provided that leads are kept at ambient temperature VALUE 100 150 200 120 200 250 250 200 625 1 200 UNIT V V V V V V mA mA mA A mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air Thermal resistance junction to lead Junction temperature Storage temperature range Operating temperature range RthJA RthJL Tj Tstg Top VALUE 625 450 150 -65 to +150 -55 to +150 UNIT K/W K/W °C °C °C Rev. 2.2, 12-Jul-17 1 Document Number: 85726 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BAV19WS, BAV20WS, BAV21WS Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Forward voltage Reverse leakage current Dynamic forward resistance Diode capacitance Reverse recovery time IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, TJ = 100 °C VR = 150 V VR = 150 V, TJ = 100 °C VR = 200 V VR = 200 V, TJ = 100 °C IF = 10 mA VR = 0, f = 1 MHz IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 Ω BAV19WS BAV19WS BAV20WS BAV20WS BAV21WS BAV21WS VF VF IR IR IR IR IR IR rf CD trr TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TYP. 5 MAX. 1 1.25 100 15 100 15 100 15 1.5 50 UNIT V V nA μA nA μA nA μA Ω pF ns I F - Forward Current (mA) 1000 100 Tj = 100 °C 10 25 °C 1 0.1 0.01 0 18858 0.2 0.4 0.6 0.8 VF - Forward Voltage (V) 1 Fig. 1 - Forward Current vs. Forward Voltage Ptot - Admissible Power Dissipation (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 18864 Tamb - Ambient Temperature (°C) Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 0.3 100 rf - Dynamic Forward Resistance (Ω) IO , I F - Admissible Forward Current (A) 0.2 DC current IF Current (rectif.) IO 0.1 0 0 18859 30 60 90 120 150 Tamb - Ambient Temperature (°C) Fig. 2 - Admissible Forward Current vs. Ambient Temperature 10 1 1 18861 10 IF - Forward Current (mA) 100 Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 2.2, 12-Jul-17 2 Document Number: 85726 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BAV19WS, BAV20WS, BAV21WS Vishay Semiconductors 1000 IR(Tj)/IR (25 °C) - Leakage Current 100 10 1 0.1 0 18862_3 Reverse Voltage BAV19WS VR = 100 V BAV20WS VR = 150 V BAV21WS VR = 200 V 40 80 120 160 Tj - Junction Temperature (°C) 200 Fig. 5 - Leakage Current vs. Junction Temperature PACKAGE DIMENSIONS in millimeters (inches): SOD-323 CD - Diode Capacitance (pF) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 18863 Tj = 25 ° C 1 10 VR - Reverse Voltage (V) 100 Fig. 6 - Capacitance vs. Reverse Voltage 0.15 [0.006] 0.10 [0.004] 0° - 8° 0.1 [0.004] max. 1.15 [0.045] 0.8 [0.031] 0.2 [0.008] 0.40 [0.016] 0.25 [0.010] Cathode bar 1.95 [0.077] 1.60 [0.063] 1.5 [0.059] 1.1 [0.043] 0.40 [0.016] 0.20 [0.008] 2.85 [0..


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