BAV20WS

Production specification Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited For Pb Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance APPLICATIONS z Surface mount fast switching diode ORDERING INFORMATION Type No. Marking BAV19WS BAV20WS BAV21WS A8 T2 T3 SOD-323 Package Code SOD-323 SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol BAV19WS BAV20WS Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current VRRM VRWM VR VR(RMS) Io 120 100 71 200 200 150 106 @t=1.0 μs IFSM @t=1.0 s 2.5 0.5 Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Rage IFRM Pd RθJA Tj,TSTG 625 200 625 -65 to +150 BAV21WS Unit 250 V 200 V 141 V mA A mA mW ℃/W ℃ B018 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Reverse Breakdown Voltage BAV19WS BAV20WS BAV21WS Forward Voltage Symbol V(BR)R VFM Reverse Current BAV19WS BAV20WS BAV21WS Capacitance between terminals Reverse Recovery Time IR CT trr Min Max Unit 120 200 V 250 - 1.0 V 1.25 - 0.1 μA 0.1 0.1 - 5 pF - 50 ns Test Cond...