Silicon Epitaxial Planar Diode
Production specification
Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS
FEATURES
z Fast Switching Speed z Surf...
Description
Production specification
Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS
FEATURES
z Fast Switching Speed z Surface Mount Package Ideally Suited For
Pb
Lead-free
Automatic Insertion
z For General Purpose Switching Applications
z High Conductance
APPLICATIONS
z Surface mount fast switching diode
ORDERING INFORMATION
Type No.
Marking
BAV19WS BAV20WS BAV21WS
A8 T2 T3
SOD-323
Package Code SOD-323 SOD-323 SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol BAV19WS BAV20WS
Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current
VRRM VRWM VR VR(RMS) Io
120
100
71 200
200 150 106
@t=1.0 μs IFSM @t=1.0 s
2.5 0.5
Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Rage
IFRM Pd RθJA Tj,TSTG
625 200 625 -65 to +150
BAV21WS Unit 250 V
200 V
141 V mA
A
mA mW ℃/W ℃
B018 Rev.A
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Production specification
Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic Reverse Breakdown Voltage
BAV19WS BAV20WS BAV21WS Forward Voltage
Symbol V(BR)R VFM
Reverse Current BAV19WS BAV20WS BAV21WS
Capacitance between terminals Reverse Recovery Time
IR
CT trr
Min Max Unit
120 200
V
250
- 1.0 V
1.25
- 0.1 μA
0.1
0.1
- 5 pF
- 50 ns
Test Cond...
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