switching diodes. BAV70M Datasheet

BAV70M diodes. Datasheet pdf. Equivalent

BAV70M Datasheet
Recommendation BAV70M Datasheet
Part BAV70M
Description High-speed switching diodes
Feature BAV70M; BAV70 series High-speed switching diodes Rev. 8 — 18 March 2015 Product data sheet 1. Product prof.
Manufacture NXP
Datasheet
Download BAV70M Datasheet




NXP BAV70M
BAV70 series
High-speed switching diodes
Rev. 8 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV70
SOT23 -
BAV70M
SOT883 SC-101
BAV70S
SOT363 SC-88
BAV70T
BAV70W
SOT416
SOT323
SC-75
SC-70
JEDEC
Package
configuration
TO-236AB small
- leadless ultra
small
- very small
- ultra small
- very small
Configuration
dual common cathode
dual common cathode
quadruple common
cathode/common cathode
dual common cathode
dual common cathode
1.2 Features and benefits
High switching speed: trr 4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: Cd 1.5 pF
Reverse voltage: VR 100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 80 V
Min Typ
-
-
[1] -
-
-
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max
0.5
100
4
Unit
A
V
ns



NXP BAV70M
NXP Semiconductors
BAV70 series
High-speed switching diodes
2. Pinning information
Table 3. Pinning
Pin Description
BAV70; BAV70T; BAV70W
1 anode (diode 1)
2 anode (diode 2)
3 common cathode
Simplified outline Symbol
3
3
BAV70M
1
2
3
anode (diode 1)
anode (diode 2)
common cathode
BAV70S
1
2
3
4
5
6
anode (diode 1)
anode (diode 2)
common cathode (diode 3
and diode 4)
anode (diode 3)
anode (diode 4)
common cathode (diode 1
and diode 2)
12
006aaa144
12
006aab034
1
3
2
Transparent
top view
3
12
006aab034
654
654
123
123
006aab104
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
BAV70 - plastic surface-mounted package; 3 leads
BAV70M
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm
BAV70S
SC-88
plastic surface-mounted package; 6 leads
BAV70T
SC-75
plastic surface-mounted package; 3 leads
BAV70W
SC-70
plastic surface-mounted package; 3 leads
Version
SOT23
SOT883
SOT363
SOT416
SOT323
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 16



NXP BAV70M
NXP Semiconductors
BAV70 series
High-speed switching diodes
4. Marking
Table 5. Marking codes
Type number
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
A4*
S4
A4*
A4
A4*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VRRM
repetitive peak reverse
voltage
-
VR reverse voltage
IF forward current
BAV70
Tamb 25 C
BAV70M
Ts = 90 C
BAV70S
Ts = 60 C
BAV70T
Ts = 90 C
BAV70W
Tamb 25 C
IFRM
repetitive peak forward
current
-
-
-
-
-
-
BAV70
-
BAV70M
-
BAV70S
-
BAV70T
-
BAV70W
-
IFSM non-repetitive peak forward square wave
current
tp = 1 s
tp = 1 ms
tp = 1 s
[1]
-
-
-
Max Unit
100 V
100 V
215 mA
150 mA
250 mA
150 mA
175 mA
450 mA
500 mA
450 mA
500 mA
500 mA
4A
1A
0.5 A
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 16







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