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BAV70M

NXP

High-speed switching diodes

BAV70 series High-speed switching diodes Rev. 8 — 18 March 2015 Product data sheet 1. Product profile 1.1 General des...


NXP

BAV70M

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Description
BAV70 series High-speed switching diodes Rev. 8 — 18 March 2015 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA BAV70 SOT23 - BAV70M SOT883 SC-101 BAV70S SOT363 SC-88 BAV70T BAV70W SOT416 SOT323 SC-75 SC-70 JEDEC Package configuration TO-236AB small - leadless ultra small - very small - ultra small - very small Configuration dual common cathode dual common cathode quadruple common cathode/common cathode dual common cathode dual common cathode 1.2 Features and benefits  High switching speed: trr  4 ns  Low leakage current  Small SMD plastic packages  Low capacitance: Cd  1.5 pF  Reverse voltage: VR  100 V  AEC-Q101 qualified 1.3 Applications  High-speed switching  General-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V Min Typ [1] - - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 0.5 100 4 Unit A V ns NXP Semiconductors BAV70 series High-speed switching diodes 2. Pinning information Table 3. Pinning Pin Description BAV70; BAV70T; BAV70W 1 anode (diode 1) 2 anode (diode 2) 3 common cathode Simplified outline Symbol 3 3 BAV70M 1 2 3 anode (diode 1) anode (diode 2) common cathode BAV70S...




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