High-speed double diode
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BAV70T High-speed double diode
Product specification Fi...
Description
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BAV70T High-speed double diode
Product specification File under Discrete Semiconductors, SC01
1997 Dec 19
Philips Semiconductors
High-speed double diode
Product specification
BAV70T
FEATURES
Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:
max. 75 V Repetitive peak reverse voltage:
max. 85 V Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in a common cathode configuration, fabricated in planar technology, in a very small rectangular SMD SOT416 (SC-75) package.
PINNING
PIN 1 2 3
DESCRIPTION anode 1 anode 2 common cathode
handbook, halfpage
3
3
1 1 2 MAM368
2
Marking code: A4.
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode (unless otherwise specified)
VRRM VR IF
repetitive peak reverse voltage continuous reverse voltage continuous forward current
IFRM repetitive peak forward current IFSM non-repetitive peak forward current
Ptot total power dissipation Tstg storage temperature Tj junction temperature
Ts = 90 °C; see Fig.2 single diode loaded both diodes loaded
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 µs t = 1 ms t=1s Ts = 90 °C; one diode loaded
MIN. MAX. UNIT
− 85 V − 75 V
− 150 mA − 75 mA − 5...
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