High-speed double diode
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV99 High-speed double diode
Product specification Supersedes ...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV99 High-speed double diode
Product specification Supersedes data of 1996 Sep 17
1999 May 11
Philips Semiconductors
High-speed double diode
Product specification
BAV99
FEATURES
Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:
max. 75 V Repetitive peak reverse voltage:
max. 85 V Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
High-speed switching in thick and thin-film circuits.
DESCRIPTION
The BAV99 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.
PINNING
PIN 1 2 3
DESCRIPTION anode cathode common connection
handbook, halfpa2ge
1 2
3
1 3
MAM232
Marking code: A7p = made in Hong Kong; A7t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode VRRM VR IF
IFRM IFSM
Ptot Tstg Tj
repetitive peak reverse voltage continuous reverse voltage continuous forward current
repetitive peak forward current non-repetitive peak forward current
total power dissipation storage temperature junction temperature
single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 µs t = 1 ms t=1s Tamb = 25 °C; note 1
Note 1. Device mounted on an FR4 printed-circuit boar...
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