BAV99W

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV99W High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors High-speed double diode Product specification BAV99W FEATURES Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS High-speed switching in e.g. surface mounted circuits. DESCRIPTION The BAV99W consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the very small SOT323 plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection 21 21 Top view 3 3 MAM094 Marking code: A7. Fig.1 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. MIN. MAX. UNIT − 85 V − 75...