double diode. BAV99W Datasheet

BAV99W diode. Datasheet pdf. Equivalent

BAV99W Datasheet
Recommendation BAV99W Datasheet
Part BAV99W
Description High-speed double diode
Feature BAV99W; DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV99W High-speed double diode Product spe.
Manufacture Philips
Datasheet
Download BAV99W Datasheet




Philips BAV99W
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BAV99W
High-speed double diode
Product specification
Supersedes data of 1996 Sep 17
1999 May 11



Philips BAV99W
Philips Semiconductors
High-speed double diode
Product specification
BAV99W
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAV99W consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the very small SOT323 plastic SMD
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
cathode
common connection
21
21
Top view
3
3
MAM094
Marking code: A7.
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward
current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
single diode loaded; note 1;
see Fig.2
double diode loaded; note 1;
see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
85 V
75 V
150 mA
130 mA
500 mA
4A
1A
0.5 A
200 mW
65 +150 °C
150 °C
1999 May 11
2



Philips BAV99W
Philips Semiconductors
High-speed double diode
Product specification
BAV99W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
trr reverse recovery time
Vfr forward recovery voltage
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.7
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
715
855
1
1.25
30
1
30
50
1.5
4
1.75
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
VALUE
300
625
UNIT
K/W
K/W
1999 May 11
3







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