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double diode. BAV99W Datasheet |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BAV99W
High-speed double diode
Product specification
Supersedes data of 1996 Sep 17
1999 May 11
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Philips Semiconductors
High-speed double diode
Product specification
BAV99W
FEATURES
• Very small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAV99W consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the very small SOT323 plastic SMD
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
cathode
common connection
21
21
Top view
3
3
MAM094
Marking code: A7.
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward
current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
single diode loaded; note 1;
see Fig.2
double diode loaded; note 1;
see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
− 85 V
− 75 V
− 150 mA
− 130 mA
− 500 mA
−4A
−1A
− 0.5 A
− 200 mW
−65 +150 °C
− 150 °C
1999 May 11
2
|
Philips Semiconductors
High-speed double diode
Product specification
BAV99W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
trr reverse recovery time
Vfr forward recovery voltage
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
715
855
1
1.25
30
1
30
50
1.5
4
1.75
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
VALUE
300
625
UNIT
K/W
K/W
1999 May 11
3
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