DatasheetsPDF.com

2SA1306B Datasheet PDF

Toshiba

Posted Nov 29, 2015 (Stock #: 952382)



Part Number 2SA1306B
Manufacturers Toshiba
Description PNP Transistor
Datasheet Web ViewView 2SA1306B Datasheet
Download File Download2SA1306B PDF File
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency : ff=100MHz (Typ.) . Complementary to 2SC3298, 2SC3298A, 2S C3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SA1306 2SA1306A 2SA1306B VcB
More View O Collector-Emitter Voltage 2SA1306 2SA1306A 2SA1306B v CEO Emitter-Base Voltage Collector Current VeBO ic Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB PC T J T stg RATING -160 -180 -200 -160 -180 -200 -5 -1.5 -0.15 20 150 -55-150 UNIT V V V A A W °C °C Unit in iTim 10.3MAX. 7.0 #3.2±0.2 /*l ^"13 S 'A wd o H 1 1 1.4 LftSS 0.76-0.15 i 2.5 4x0.2 5 1 1.2 M S S 2.5 4±a2 5 ::: v +1 d " OB ! 1 1 2 3\ „^ CJ _1 . . 1. BASE 2. COLLECTOR 3. EMITTER JEDEC - EIAJ - TOSHIBA 2-10L1A Weight : 2 . lg ELECTRICAL CHARACTERISTICS (Ta=25 c) CHARACTERISTIC Collector Cut
  2SA1306B   2SA1306B





Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)