MBRF30150CT

MBRF30150CT Dual High Voltage Schottky Rectifier ●Features： ■Common Cathode Structure ■Low Power Loss and High Efficiency ■Low Forward Voltage Drop ■High Surge Capability ●Application: ■ High Frequency Switch ■ Free Wheeling,and Polarity Protection Applications Absolute Maximum Ratings(Tc=25°C unless otherwise noted) Symbol Parameter Value VRRM Maximum Repetitive Reverse Voltage 150 VR IF(AV) IFSM Maximum DC Reverse Voltage Average Rectified Forward Current, Tc=120°C Peak Forward Surge Current,8.3ms Half Sine wave 150 15(Per Leg) 30(Per Device) 250 Tj Operating Junction Temperature 150 Tstg Storage Temperature Range -55 to+150 Unit V V A A °C °C Thermal Characteristics(Tc=25°C unless otherwise noted) Symbol Parameter RθJC Thermal Resistance,Junction to Case Per Leg Max 3.2 Unit °C /W Electrical Characteristics(Tc=25°C unless otherwise noted) Symbol VRRM IR Parameter Maximum Repetitive Reverse Voltage Reverse Current VF Forward Voltage Test Conditons IR=100μA VR =150V Tc=25°C VR =150V Tc=125°C IF=15A Tc=25°C IF=15A Tc=125°C IF=30A Tc=25°C IF=30A Tc=125°C Min Max Unit 150 V 0.1 5 0.96 0.84 1.11 1.01 mA V HUAKE semiconductors 2014.08 1/3 ：HK-WI-TD-004 /：A/0 MBRF30150CT Dual High Voltage Schottky Rectifier Typical Performance Characteristics Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current Figure 3. Junction Capacitance Figure 4. Power Derating HUAKE semiconductors 2014.08 2/3 ：HK-WI-TD-004 /：A/0 MBRF30150CT Du...