IRF6702M2DTR1PbF

Applications l Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Features l Replaces Two discrete high side MOSFETs l Optimized for High Frequency Switching l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Compatible with existing Surface Mount Techniques l RoHS Compliant and Halogen Free l 100% Rg tested PD - 97540 IRF6702M2DTRPbF IRF6702M2DTR1PbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 9.4nC 3.3nC 1.2nC 17nC 6.3nC 1.8V D D G1 S1 G2 S2 Applicable DirectFET Outline and Substrate Outline  DirectFET™ ISOMETRIC S1 S2 SB M2 M4 MA L4 L6 L8 Description The IRF6702M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package. The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6702M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing ...