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FDQ7236AS

Fairchild Semiconductor

N-Channel MOSFET

FDQ7236AS January 2011 FDQ7236AS Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package General Descriptio...


Fairchild Semiconductor

FDQ7236AS

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Description
FDQ7236AS January 2011 FDQ7236AS Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package General Description The FDQ7236AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology. The FDQ7236AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Features Q2: 14 A, 30V. RDS(on) = 8.7 mΩ @ VGS = 10V RDS(on) = 10.5 mΩ @ VGS = 4.5V Q1: 11 A, 30V. RDS(on) = 13.2 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.5V SO-14 pin 1 S2 S2 S2 G1G2 Vin Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a & 1b) (Note 1c & 1d) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) (Note 1c & 1d) Package Marking and Ordering Information Device Marking FDQ7236AS Device FDQ7236AS Reel Size 13” Q2 Q1 30 30 ±20 ±20 14 11 50 50 2.4 1.8 1.3 1.1 −55 to +150 52 68 94 118 Units V V A W °C °C/W Tape width 16mm Quantity 2500 units ©2011 Fairchild Semiconductor Corporation FDQ7236AS Rev C FDQ7236AS Electrical Characteristics Symbol Parameter TA = 25°C unless oth...




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