Power MOSFET. MMDF3N04HD Datasheet

MMDF3N04HD MOSFET. Datasheet pdf. Equivalent

MMDF3N04HD Datasheet
Recommendation MMDF3N04HD Datasheet
Part MMDF3N04HD
Description Power MOSFET
Feature MMDF3N04HD; MMDF3N04HD Power MOSFET 3 Amps, 40 Volts N−Channel SO−8, Dual These miniature surface mount MOSFE.
Manufacture ON Semiconductor
Datasheet
Download MMDF3N04HD Datasheet




ON Semiconductor MMDF3N04HD
MMDF3N04HD
Power MOSFET
3 Amps, 40 Volts
NChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. These devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Features
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
Avalanche Energy Specified
This is a PbFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage Continuous
Drain Current
CCPuoolnnstteiinnduuDoouurassin@@CTTuAArre==n27t 50(N°°CCot((eNN3oo)ttee
1)
1)
TotaLliPneowareDr DerisastiipnagtiFonac@torT(A1)= 25°C (Note 1)
VDSS
VDGR
VGS
IDIIDDM
PD
40 Vdc
40 Vdc
± 20 Vdc
3.4 Adc
3.0
40 Apk
2.0 W
16 mW/°C
TotaLliPneowareDr DerisastiipnagtiFonac@torT(A2)= 25°C (Note 2)
PD
1.39
11.11
W
mW/°C
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
LEVnG=eS4rg=.0y1m0 HSV,tdaVcr,tDinPSge=aTkJ4I0=L
2=5°9C.0(VADpDk, =
Vdc)
25
Vdc,
THERMAL CHARACTERISTICS
TJ, Tstg
EAS
55 to 150
162
°C
mJ
Rating
Symbol Typ Max Unit
Thermal Resistance, (PCB Mount)
JunctiontoAmbient, (Note 1)
JunctiontoAmbient, (Note 2)
RRqqJJAA
°C/W
62.5
90
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1.
2.
When mounted on
When mounted on
@ Steady State)
m1insimquuamrereFcRom4moernGded10FRboa4rodr(GVG1S0=b1o0arVd,
@ 10 Secs)
(VGS = 10 V,
3. Repetitive rating; pulse width limited by maximum junction temperature.
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V(BR)DSS
40 V
RDS(on) TYP
80 mW @ TBD
ID MAX
3.0 A
NChannel
D
G
S
8
1
SO8
CASE 751
STYLE 11
MARKING
DIAGRAM
8
D3N04H
AYWWG
G
1
D3N04H = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
1 8 Drain1
2 7 Drain1
3 6 Drain2
4 5 Drain2
ORDERING INFORMATION
Device
Package
Shipping
MMDF3N04HDR2G SO8 2500 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 5
1
Publication Order Number:
MMDF3N04HD/D



ON Semiconductor MMDF3N04HD
MMDF3N04HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0)
(Notes 4 & 6)
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(Cpk 2.0)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Notes 4 & 6)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 3.4 Adc)
(VGS = 4.5 Vdc, ID = 1.7 Adc)
(Cpk 2.0)
(Notes 4 & 6)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.7 Adc)
(Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 20 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc, RG = 6 W) (Note 4)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 20 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc, RG = 6 W) (Note 4)
Fall Time
Gate Charge
(VDS = 40 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc) (Note 4)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 3.4 Adc, VGS = 0 Vdc) (Note 4)
(IS = 3.4 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 3.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 4)
Reverse Recovery Storage Charge
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Reflects typical values. Cpk =
Max limit Typ
3 x SIGMA
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min Typ Max Unit
40
4.3
Vdc
mV/°C
mAdc
0.015
2.5
0.15 10
0.013 500 nAdc
Vdc
1.0 2.0 3.0
4.9 mV/°C
mW
55 80
79 100
2.0 4.5 Mhos
450 900 pF
130 230
32 96
9.0 18
ns
15 30
28 56
19 38
13 26 ns
77 144
17 34
20 40
13.9 28
nC
2.1
3.7
5.4
Vdc
0.87 1.5
0.8
27
ns
20
7.0
0.03
mC
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2



ON Semiconductor MMDF3N04HD
MMDF3N04HD
TYPICAL ELECTRICAL CHARACTERISTICS
6 VGS =
10 V
5
4
3
4.5 V
4.3 V
4.1 V
3.9 V
TJ = 25°C
3.7 V
3.5 V
2 3.3 V
1 2.7 V 3.1 V
2.9 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
6
VDS 10 V
5 TJ = 25°C
4
3
100°C
2 25°C
1 TJ = -55°C
0
1.5 2 2.5 3 3.5 4
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4.5
0.6
ID = 3.4 A
0.5 TJ = 25°C
0.1
0.095
0.09
TJ = 25°C
0.4
0.085
VGS = 4.5
0.08
0.3 0.075
0.07
0.2
0.065
0.1 0.06
0.055
0
2 3 4 5 6 7 8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.05
0
10 V
1 2345
ID, DRAIN CURRENT (AMPS)
6
Figure 3. OnResistance versus
GatetoSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 3.4 A
1.5
1.0
0.5
100
VGS = 0 V
10
1
TJ = 125°C
100°C
25°C
0
- 50 - 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation
with Temperature
0.1
0 5 10 15 20 25 30 35 40
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
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