Power MOSFET. IRF5852PbF Datasheet

IRF5852PbF MOSFET. Datasheet pdf. Equivalent

IRF5852PbF Datasheet
Recommendation IRF5852PbF Datasheet
Part IRF5852PbF
Description Power MOSFET
Feature IRF5852PbF; l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low G.
Manufacture International Rectifier
Datasheet
Download IRF5852PbF Datasheet




International Rectifier IRF5852PbF
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
VDSS
20 V
PD - 95261A
IRF5852PbF
HEXFET® Power MOSFET
RDS(on) max (W)
0.090@VGS = 4.5V
0.120@VGS = 2.5V
ID
2.7A
2.2A
Description
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
TSOP-6
B
T! !
B! "
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# 9!
Top View
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
2.7
2.2
11
0.96
0.62
7.7
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
130
Units
°C/W
1
04/20/10



International Rectifier IRF5852PbF
IRF5852PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
20 ––– ––– V
––– 0.016 ––– V/°C
––– ––– 0.090
––– ––– 0.120
0.60 ––– 1.25 V
5.2 ––– ––– S
––– ––– 1.0
––– ––– 25
µA
––– ––– 100
––– ––– -100 nA
––– 4.0 6.0
––– 0.95 ––– nC
––– 0.88 –––
––– 6.6 –––
––– 1.2 –––
––– 15 ––– ns
––– 2.4 –––
––– 400 –––
––– 48 ––– pF
––– 32 –––
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 2.7A ‚
VGS = 2.5V, ID = 2.2A ‚
VDS = VGS, ID = 250µA
VDS = 10V, ID = 2.7A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
VGS = 12V
VGS = -12V
ID = 2.7A
VDS = 16V
VGS = 4.5V ‚
VDD = 10V ‚
ID = 1.0A
RG = 6.2
VGS = 4.5V
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
25
6.5
Max.
0.96
11
1.2
38
9.8
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 0.96A, VGS = 0V
TJ = 25°C, IF = 0.96A
di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 5sec.
2 www.irf.com



International Rectifier IRF5852PbF
100
10
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
IRF5852PbF
100
10
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
1
1.50V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1 1.50V
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10 TJ = 25° C
TJ = 150° C
1
0.1
1.5
V DS = 15V
20µs PULSE WIDTH
2.0 2.5
VGS, Gate-to-Source Voltage (V)
3.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 2.7A
1.5
1.0
0.5
0.0 VGS= 4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3







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