Power MOSFET. IRF5851PbF Datasheet

IRF5851PbF MOSFET. Datasheet pdf. Equivalent

IRF5851PbF Datasheet
Recommendation IRF5851PbF Datasheet
Part IRF5851PbF
Description Power MOSFET
Feature IRF5851PbF; l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l.
Manufacture International Rectifier
Datasheet
Download IRF5851PbF Datasheet




International Rectifier IRF5851PbF
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
PD-95341A
IRF5851PbF
HEXFET® Power MOSFET
* 
6 
 '
 6
VDSS
N-Ch
20V
P-Ch
-20V
* 
 ' RDS(on) 0.0900.135
Description
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
RDS(on) reduction enables an increase in current-handling capability.
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient ƒ
www.irf.com
Max.
N-Channel
P-Channel
20 -20
2.7 -2.2
2.2 -1.7
11 -9.0
0.96
0.62
7.7
± 12
-55 to + 150
Units
A
W
mW/°C
V
°C
Typ.
–––
Max.
130
Units
°C/W
1
04/20/10



International Rectifier IRF5851PbF
IRF5851PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20 — —
P-Ch -20 — —
V
N-Ch — 0.016 —
P-Ch — -0.011 — V/°C
N-Ch
P-Ch
— 0.090
— 0.120
— 0.135
— 0.220
N-Ch 0.60 — 1.25
P-Ch -0.45 — -1.2 V
N-Ch 5.2 — —
P-Ch 3.5 — — S
N-Ch — — 1.0
P-Ch — — -1.0
N-Ch — — 25 µA
P-Ch — — -25
N-P –– — ±100
N-Ch — 4.0 6.0
P-Ch — 3.6 5.4
N-Ch — 0.95 —
P-Ch — 0.66 — nC
N-Ch — 0.83 —
P-Ch — 5.7 —
N-Ch — 6.6 —
P-Ch — 8.3 —
N-Ch — 1.2 —
P-Ch — 14 —
N-Ch — 15 — ns
P-Ch — 31 —
N-Ch — 2.4 —
P-Ch — 28 —
N-Ch — 400 —
P-Ch — 320 —
N-Ch — 48 —
P-Ch — 56 — pF
N-Ch — 32 —
P-Ch — 40 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.7A ‚
VGS = 2.5V, ID = 2.2A ‚
VGS = -4.5V, ID = -2.2A ‚
VGS = -2.5V, ID = -1.7A ‚
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 2.7A ‚
VDS = -10V, ID = -2.2A ‚
VDS = 16 V, VGS = 0V
VDS = -16V, VGS = 0V
VDS = 16 V, VGS = 0V, TJ = 70°C
VDS = -16V, VGS = 0V, TJ = 70°C
VGS = ± 12V
N-Channel
ID = 2.7A, VDS = 10V, VGS = 4.5V
‚
P-Channel
ID = -2.2A, VDS = -10V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.2,
VGS = 4.5V
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0,
VGS = -4.5V
‚
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
‚ Pulse width 400µs; duty cycle 2%.
Min. Typ. Max. Units
N-Ch — — 0.96
P-Ch —
N-Ch —
— -0.96
— 11
A
P-Ch — — -9.0
N-Ch —
P-Ch —
— 1.2
— -1.2
V
N-Ch —
P-Ch —
25
23
38
35
ns
N-Ch —
P-Ch —
6.5 9.8
7.7 12
nC
Conditions
TJ = 25°C, IS = 0.96A, VGS = 0V ‚
TJ = 25°C, IS = -0.96A, VGS = 0V ‚
N-Channel
TJ = 25°C, IF = 0.96A, di/dt = 100A/µs
P-Channel
‚
TJ = 25°C, IF = -0.96A, di/dt = -100A/µs
ƒ Surface mounted on FR-4 board, t 10sec.
2 www.irf.com



International Rectifier IRF5851PbF
100
10
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
N-Channel
IRF5851PbF
100
10
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
1
1.50V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1 1.50V
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10 TJ = 25° C
TJ = 150° C
1
0.1
1.5
V DS = 15V
20µs PULSE WIDTH
2.0 2.5
VGS, Gate-to-Source Voltage (V)
3.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 2.7A
1.5
1.0
0.5
0.0 VGS= 4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3







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