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IRF5810PbF Dataheets PDF



Part Number IRF5810PbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF5810PbF DatasheetIRF5810PbF Datasheet (PDF)

l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where pri.

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l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. VDSS -20V PD - 95469B IRF5810PbF HEXFET® Power MOSFET RDS(on) max (mW) 90@VGS = -4.5V 135@VGS = -2.5V ID -2.9A -2.3A TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -2.9 -2.3 -11 0.96 0.62 0.008 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambientƒ Max. 130 Units °C/W 1 04/20/10 IRF5810PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. -20 ––– ––– ––– 0.011 ––– ––– 60 90 ––– 87 135 -0.45 ––– -1.2 5.4 ––– ––– ––– ––– -1.0 ––– ––– -25 ––– ––– -100 ––– ––– 100 ––– 6.4 9.6 ––– 1.2 1.8 ––– 1.7 2.6 ––– 8.2 ––– ––– 14 ––– ––– 62 ––– ––– 53 ––– ––– 650 ––– ––– 110 ––– ––– 86 ––– Units V V/°C mΩ V S µA nA nC ns pF Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -2.9 ‚ VGS = -2.5V, ID = -2.3A ‚ VDS = VGS, ID = -250µA VDS = -10V, ID = -2.9A VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 70°C VGS = -12V VGS = 12V ID = -2.9A VDS = -10V VGS = -4.5V VDD = -10V ‚ ID = -1.0A RG = 6.0Ω VGS = -4.5V VGS = 0V VDS = -16V ƒ = 1kHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. Typ. Max. Units ––– ––– -1.0 ––– ––– -11 ––– ––– -1.2 ––– 110 170 ––– 130 200 A V ns nC Conditions MOSFET symbol showing the integral reverse G p-n junction diode. TJ = 25°C, IS = -1.0A, VGS = 0V TJ = 25°C, IF = -1.0A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. ƒ Surface mounted on 1 in square Cu board 2 www.irf.com -ID, Drain-to-Source Current (A) 100 10 VGS TOP -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V 1 0.1 -1.2V 0.01 0.1 20µs PULSE WIDTH TJ= 25 °C 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics -I D, Drain-to-Source Current (A) IRF5810PbF 100 10 VGS TOP -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V 1 -1.2V 0.1 0.1 20µs PULSE WIDTH TJ= 150 °C 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics -ID, Drain-to-Source Current (Α) 100.0 TJ = 25°C 10.0 TJ = 150°C 1.0 0.1 1.0 VDS = -15V 20µs PULSE WIDTH 1.5 2.0 2.5 -VGS, Gate-to-Source Voltage (V) 3.0 Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = -2.9A 1.5 1.0 0.5 0.0 VGS= -4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 C, Capacitance (pF) IRF5810PbF 1000 800 600 VCCGirsssSs = = = 0V, CCggsd + f = 1MHz Cgd , Cds SHORTED Coss = Cds + Cgd Ciss 400 200 0 1 Coss Crss 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -VGS , Gate-to-Source Voltage (V) 10 ID = -2.9A 8 VDS =-16V VDS =-10V 6 4 2 0 0 2 4 6 8 10 12 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -ISD , Reverse Drain Current (A) 100 10 TJ = 150° C 1 TJ = 25° C 0.1 0.4 VGS = 0 V 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) 1.4 Fig 7. Typical Source-Drain Diode Forward Voltage 4 -ID, D.


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