Document
l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free
Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.
VDSS
-20V
PD - 95469B
IRF5810PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
90@VGS = -4.5V
135@VGS = -2.5V
ID
-2.9A
-2.3A
TSOP-6
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
VGS TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max. -20 -2.9 -2.3 -11 0.96 0.62 0.008 ± 12 -55 to + 150
Units V
A
W mW/°C
V °C
Thermal Resistance
RθJA
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Parameter Maximum Junction-to-Ambient
Max. 130
Units °C/W
1
04/20/10
IRF5810PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. -20 ––– ––– ––– 0.011 ––– ––– 60 90 ––– 87 135 -0.45 ––– -1.2 5.4 ––– ––– ––– ––– -1.0 ––– ––– -25 ––– ––– -100 ––– ––– 100 ––– 6.4 9.6 ––– 1.2 1.8 ––– 1.7 2.6 ––– 8.2 ––– ––– 14 ––– ––– 62 ––– ––– 53 ––– ––– 650 ––– ––– 110 ––– ––– 86 –––
Units V
V/°C mΩ V S µA nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -2.9 VGS = -2.5V, ID = -2.3A VDS = VGS, ID = -250µA VDS = -10V, ID = -2.9A VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 70°C VGS = -12V VGS = 12V ID = -2.9A VDS = -10V VGS = -4.5V VDD = -10V ID = -1.0A RG = 6.0Ω VGS = -4.5V VGS = 0V VDS = -16V ƒ = 1kHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
Min. Typ. Max. Units
-1.0
-11 ––– ––– -1.2 ––– 110 170 ––– 130 200
A
V ns nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -1.0A, VGS = 0V TJ = 25°C, IF = -1.0A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
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-ID, Drain-to-Source Current (A)
100 10
VGS TOP -10V
-7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V
1
0.1 -1.2V
0.01 0.1
20µs PULSE WIDTH TJ= 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
-I D, Drain-to-Source Current (A)
IRF5810PbF
100 10
VGS TOP -10V
-7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V
1
-1.2V
0.1 0.1
20µs PULSE WIDTH TJ= 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
-ID, Drain-to-Source Current (Α)
100.0
TJ = 25°C
10.0
TJ = 150°C
1.0
0.1 1.0
VDS = -15V 20µs PULSE WIDTH
1.5 2.0 2.5
-VGS, Gate-to-Source Voltage (V)
3.0
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = -2.9A 1.5
1.0
0.5
0.0 VGS= -4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
C, Capacitance (pF)
IRF5810PbF
1000 800 600
VCCGirsssSs
= = =
0V, CCggsd
+
f = 1MHz Cgd , Cds
SHORTED
Coss = Cds + Cgd
Ciss
400
200 0 1
Coss Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
-VGS , Gate-to-Source Voltage (V)
10 ID = -2.9A 8
VDS =-16V VDS =-10V
6
4
2
0 0 2 4 6 8 10 12
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
-ISD , Reverse Drain Current (A)
100
10 TJ = 150° C
1 TJ = 25° C
0.1 0.4
VGS = 0 V
0.6 0.8 1.0 1.2
-VSD ,Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode Forward Voltage
4
-ID, D.