uPA2560

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2560 Dual N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The μ PA2560 is Dual N-channel MOSFETs designed for Back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. FEATURES 4.5 V drive available Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A) Built-in gate protection diode Small and surface mount package (8-pin VSOF (2429)) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation (1 unit, 5 s) Note2 Total Power Dissipation (2 units, 5 s) Note2 ID(DC) ID(pulse) PT1 PT2 ±4.5 A ±18 A 1.5 W 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mm. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 0 to 0.025 2.8±0.1 2.4±0.1 1 0.32±0.05 4 0.05 M S A 0.8±0.05 S (0.3) 1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1 EQUIVALENT CIRCUIT (1/2) Drain ORDERING INFORMATION PART NUMBER μ PA2560T1H-T1-AT Note μ PA2560T1H-T2-AT Note LEAD PLATING PACKING PACKAGE Pure Sn 8 mm embossed taping 8-pin VSOF (2429) 3000 p/reel Note Pb-free (This product does not c...