2SC4434
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : ...
2SC4434
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switchihg
Transistor) Application : Switching
Regulator, Lighting Inverter, and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SC4434 500 400 10
15(Pulse30) 5
120(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=12V, IE=–1.5A VCB=10V, f=1MHz
(Ta=25°C)
2SC4434 100max 100max 400min
Unit µA µA V
10 to 25
0.7max
V
1.3max
V
10typ
MHz
135typ
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
200 25 8 10 –5 1.6
IB2 ton tstg tf (A) (µs) (µs) (µs) –3.2 0.5max 2.0max 0.15max
External Dimensions MT-100(TO3P)
15.6±0.4 9.6
4.8±0.2 2.0±0.1
1.8 5.0±0.2
19.9±0.3 4.0 2.0
20.0min 4.0max
a ø3.2±0.1 b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
Collector Current IC(A)
I C– V CE Characteristics (Typical)
10 1.2A
1A
8 600mA
400mA 6
4 200mA
IB=100mA 2
0 0 1 2 34 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
C
˚
Temp) 75
(Case C
1 VBE(sat)
25˚C (Case Temp) 75˚C (Case Temp) 150˚C (Case Temp)...
