FDMS0306AS N-Channel PowerTrench® SyncFETTM
March 2015
FDMS0306AS
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 2.4 mΩ
...
FDMS0306AS N-Channel PowerTrench® SyncFETTM
March 2015
FDMS0306AS
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 2.4 mΩ
Features
General Description
Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency
SyncFET
Schottky Body Diode MSL1 Robust Package Design 100% UIL Tested RoHS Compliant
The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic
Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification
Top
Bottom
Pin 1
S
D5
S
S G
D6
Power 56
D D D D
D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25°C TC = 25°C TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a) (Note 3)
(Note 1a)
Ratings 30 ±20 49 ...