DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC846T; BC847T NPN general purpose transistors
Preliminary specification Sup...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC846T; BC847T
NPN general purpose
transistors
Preliminary specification Supersedes data of 1997 Jul 07
1999 Apr 26
Philips Semiconductors
NPN general purpose
transistors
Preliminary specification
BC846T; BC847T
FEATURES Low current (max. 100 mA) Low voltage (max. 65 V).
APPLICATIONS General purpose switching and amplification, especially
in portable communication equipment Electronic data processing (EDP) and consumer
applications.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
NPN transistor in an SC-75 plastic package.
PNP complements: BC856T and BC857T.
MARKING
TYPE NUMBER BC846AT BC846BT BC847AT
MARKING CODE
1A 1B 1E
TYPE NUMBER
BC847BT BC847CT
MARKING CODE
1F 1G
handbook, halfpage
3
1 Top view
2
3 1
2
MAM348
Fig.1 Simplified outline (SC-75) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO IC ICM IBM Ptot Tstg Tj Tamb
collector-base voltage BC846AT; BC846BT BC847AT; BC847BT; BC847CT
collector-emitter voltage BC846AT; BC846BT BC847AT; BC847BT; BC847CT
emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
open emitter open base open collector
Tamb ≤ 25 °C; note 1
Note 1.
Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
− 80 V − 50 V
− 65 V − 45 V −5V −...