BC848A

BC848A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Collector-base breakdown voltage (IC= 10mA, IE=0) VCBO Collector-emitter breakdown voltage (IC= 10mA, IB=0) Emitter-base breakdown voltage (IE= 10mA, IC=0) VCEO VEBO Collector cut-off current (VCB= 30V, IE=0) ICBO Collector cut-off current (VCE= 30V, IB=0) Emitter cut-off current (VEB= 5V, IC=0) ICEO IEBO DC current gain (VCE= 5V, IC= 2mA) hFE(1) Collector-emitter saturation voltage (IC= 100mA, IB= 5mA) VCE(sat) Base-emitter saturation voltage (IC= 100mA, IB= 5mA) Transition frequency (VCE= 5V, IC= 10mA, f= 100MHZ) VBE(sat) fT DEVICE MARKING BC848A Notes: 1. Transistor mounted on an FR4 Printed-circuit board. 2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. SOT-23 COLLECTOR 3 BASE 1 2 EMITTER 0.006(0.15) 0.003(0.08) ...