NPN Transistor. BC848B Datasheet
SOT-23 BIPOLAR TRANSISTORS
* Power dissipation
W (Tamb=25OC) Note1
* Collector current
* Collector-base voltage
VCBO : 30 V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Collector-base breakdown voltage (IC= 10mA, IE=0)
Collector-emitter breakdown voltage (IC= 10mA, IB=0)
Emitter-base breakdown voltage (IE= 10mA, IC=0)
Collector cut-off current (VCB= 30V, IE=0)
Collector cut-off current (VCE= 30V, IB=0)
Emitter cut-off current (VEB= 5V, IC=0)
DC current gain (VCE= 5V, IC= 2mA)
Collector-emitter saturation voltage (IC= 100mA, IB= 5mA)
Base-emitter saturation voltage (IC= 100mA, IB= 5mA)
Transition frequency (VCE= 5V, IC= 10mA, f= 100MHZ)
Notes: 1. Transistor mounted on an FR4 Printed-circuit board.
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
Dimensions in inches and (millimeters)
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