Signal Transistor. BC817-25 Datasheet

BC817-25 Transistor. Datasheet pdf. Equivalent

BC817-25 Datasheet
Recommendation BC817-25 Datasheet
Part BC817-25
Description NPN Small Signal Transistor
Feature BC817-25; BC817-16/-25/-40 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES ● Low power loss,.
Manufacture Taiwan Semiconductor
Datasheet
Download BC817-25 Datasheet




Taiwan Semiconductor BC817-25
BC817-16/-25/-40
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
FEATURES
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: SOT-23
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Weight: 8mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VCBO
VCEO
VEBO
IC
hFE
Package
50
V
45
V
5
V
500
mA
250-600
SOT-23
Configuration
Single Dice
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
BC817- BC817- BC817-
SYMBOL
UNIT
16
25
40
Marking code on the device
6A
6B
6C
Power dissipation
Collector-base voltage, emitter open
IC = 10 μA, IE = 0
PD
VCBO
300
mW
50
V
Collector-emitter voltage, base open IC = 10 mA, IB = 0
VCEO
45
V
Emitter-base voltage, collector open IE = 1 μA, IC = 0
VEBO
5
V
Collector current, dc
IC
500
mA
Junction temperature
TJ
-55 to +150
°C
Storage temperature
TSTG
-55 to +150
°C
1
Version:J1702



Taiwan Semiconductor BC817-25
BC817-16/-25/-40
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Collector cutoff current, emitter
open
Emitter cutoff current, collector
open
VCB = 45 V, IE = 0
VEB = 4 V, IC = 0
ICBO
-
IEBO
-
DC current gain
BC817-16
100
VCE = 1 V,
IC = 100 mA
BC817-25
hFE
160
BC817-40
250
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Transition frequency
IC = 500 mA, IB = 50 mA
IC = 500 mA, IB = 50 mA
VCE = 5 V , IC = 10 mA,
f= 100MHz
VCE(sat)
VBE(sat)
fT
-
-
100
TYP
-
-
-
-
-
-
-
-
MAX UNIT
0.1
µA
0.1
µA
250
400
600
0.7
V
1.2
V
-
MHz
ORDERING INFORMATION
PART NO.
PACKING
CODE
BC817-XX
RF
(Note 1)
Notes:
1. "xx" is Device Code is"16" and "25" and "40"
*: optional available
PACKING CODE
SUFFIX(*)
G
PACKAGE
SOT-23
PACKING
3K / 7" Reel
EXAMPLE
EXAMPLE P/N PART NO.
BC817-16 RFG BC817-16
PACKING CODE
RF
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2
Version:J1702



Taiwan Semiconductor BC817-25
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Typical Pulsed Current Gain VS.
Collector Current
10
1
0.1
0.01
0.001
0
VCE = 5 V
100
200
300
400
500
hFE
BC817-16/-25/-40
Taiwan Semiconductor
Fig. 2 Collector-Emitter Saturation Voltage VS.
Collector Current
10.00
1.00
0.10
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VCE(sat) , Collector Emitter Voltage (V)
Fig.3 Base-Emitter Saturation Voltage
VS. Collector Current
1000
Fig.4 Base-Emitter On Voltage
VS. Collector Current
1
100
0.1
10
0.01
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE , Base-Emitter Voltage (V)
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE(sat) , Base-Emitter on Voltage (V)
3
Version:J1702







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