NPN Transistor. BC817-25 Datasheet

BC817-25 Transistor. Datasheet pdf. Equivalent

BC817-25 Datasheet
Recommendation BC817-25 Datasheet
Part BC817-25
Description NPN Transistor
Feature BC817-25; SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 FEATURES * For general AF a.
Manufacture RECTRON
Datasheet
Download BC817-25 Datasheet





RECTRON BC817-25
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
BC817-16
BC817-25
BC817-40
FEATURES
* For general AF applications
* High collector current
* High current gain
* Low collector-emitter saturation voltage
SOT-23
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-base voltage
Collector-emitter voltage
SYMBOL
VCBO
VCEO
VALUE
50
45
UNITS
V
V
Emitter-base voltage
Collector current-continuous
Collector dissipation
VEBO
IC
PC
5V
0.5 A
0.3 W
Junction and storage temperature
TJ,Tstg
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
-55 -150
oC
BC817-16 BC817-25 BC817-40 BC817-16 BC817-25 BC817-40
UNITS
MIN.
MAX.
Collector-base breakdown voltage (IC= 10mA, IE=0)
VCBO
50
-V
Collector-emitter breakdown voltage (IC= 10mA, IB=0)
VCEO
45
-V
Emitter-base breakdown voltage (IE= 1mA, IC=0)
Collector cut-off current (VCB= 45V, IE=0)
VEBO
ICBO
5
-
-V
0.1 mA
Emitter cut-off current (VEB= 4V, IC=0)
DC current gain (VCE= 1V, IC= 100mA)
IEBO
hFE(1)
-
100 160
250
0.1 mA
250 400 600
-
Collector-emitter saturation voltage (IC= 500mA, IB= 50mA)
Base-emitter saturation voltage (IC= 500mA, IB= 50mA)
VCE(sat)
VBE(sat)
-
-
0.7 V
1.2 V
Base-emitter voltage (VCE= 1V, IC= 500mA)
Collector capactiance (VCB=10V, f = 1MHz)
Transition frequency (VCE= 5V, IC= 10mA, f= 100MHZ)
VBE(ON)
Cob
fT
-
10
100
1.2
-
V
pF
MHZ
MARKING:
BC817-16---6A;
BC817-25---6B;
BC817-40---6C
2007-3



RECTRON BC817-25
RATING AND CHARACTERISTICS CURVES ( BC817-16/-25/-40 )
500
VCE=5.0V
400
300
200
-40OC
100
125OC
25OC
0
0.001
0.01
0.1
12
IC, COLLECTOR CURRENT (A)
Figure1. TYPICAL PULSE CURRENT GAIN
vs. COLLECTOR CURRENT
b = 10
1.2
1.0
-40OC
0.8
0.6
25OC
125OC
0.4
0.2
1 10 100 1000
Ic,COLLECTOR CURRENT(mA)
Figure3. BASE-EMITTER STURATION VOLTAGE
vs. COLLECTOR CURRENT
100
VCB= 40V
10
1
0.1
0.01
25 50
75 100 125
150
TA, AMBIENT TEMPERATURE (OC)
Figure5. COLLECTOR-CUT OFF CURRENT
vs. COLLECTOR CURRENT
0.6 b = 10
0.5
0.4
125OC
25OC
0.3
-40OC
0.2
0.1
0
0.01
0.1
13
IC, COLLECTOR CURRENT (A)
Figure2. COLLECTOR-EMITTER SATURATION
VOLTAGE vs.COLLECTOR CURRENT
1
VCE= 5V
0.8 -40OC
25OC
0.6
125OC
0.4
0.2
0.001
0.01
0.1
1
Ic, COLLECTOR CURRENT (A)
Figure4. BASE-EMITTER ON VOLTAGE vs.
COLLECTOR CURRENT
40
30
20
10
0
0 4 8 12 16 20 24 28
VCB, COLLECTOR-BASE VOLTAGE (V)
Figure6. COLLECTOR-BASE CAPACITANCE
vs. COLLECTOR-BASE VOLTAGE



RECTRON BC817-25
RATING AND CHARACTERISTICS CURVES ( BC817-16/-25/-40 )
500
VCE=10V
400
300
200
100
0
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure7. GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1000
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150
TEMPERATURE (OC)
Figure8. POWER DISSIPATION vs.
AMBIENT TEMPERATURE





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