NPN Transistor. BC817-40W Datasheet

BC817-40W Transistor. Datasheet pdf. Equivalent

BC817-40W Datasheet
Recommendation BC817-40W Datasheet
Part BC817-40W
Description General Purpose NPN Transistor
Feature BC817-40W; BC817-40W 45 V, 0.5 A, General Purpose NPN Transistor ON Semiconductor’s BC817−40W is a General Pur.
Manufacture ON Semiconductor
Datasheet
Download BC817-40W Datasheet




ON Semiconductor BC817-40W
BC817-40W
45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45
V
50
V
5.0
V
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
PD
RqJA
460
mW
272
°C/W
Junction and Storage Temperature
Range
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2
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COLLECTOR
3
1
BASE
2
EMITTER
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
CE MG
G
1
CE = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
BC817−40WT1G
SC−70
(Pb−Free)
NSVBC817−40WT1G SC−70
(Pb−Free)
Shipping
3000 / Tape &
Reel
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
May, 2016 − Rev. 2
Publication Order Number:
BC817−40W/D



ON Semiconductor BC817-40W
BC817−40W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
Collector −Emitter Breakdown Voltage
(VEB = 0 V, IC = 10 mA)
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ON CHARACTERISTICS
V(VR)CEO
45
V
V(VR)CES
50
V
V(VR)EBO
5.0
V
ICBO
100
nA
5.0
mA
DC Current Gain (Note 2)
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
Collector −Emitter Saturation Voltage (Note 2)
(IC = 500 mA, IB = 50 mA)
Base −Emitter On Voltage (Note 2)
(IC = 500 mA, VCE = 1.0 V)
SMALL− SIGNAL CHARACTERISTICS
hFE
250
600
40
VCE(sat)
0.7
V
VBE(on)
1.2
V
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
10
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Condition: Pulse Width = 300 msec, Duty Cycle 2%
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ON Semiconductor BC817-40W
BC817−40W
TYPICAL CHARACTERISTICS
700
150°C
600
500
400 25°C
VCE = 1 V
1
IC/IB = 10
0.1
25°C
150°C
−55°C
300
−55°C
0.01
200
100
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1.1
1.0
IC/IB = 10
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
0.001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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