BC858

PNP Silicon Planar Epitaxial Transistors BC856 BC857 BC858 Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: inch (mm) Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (+VBE = 1V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 60 oC Storge Temperature Junction Temperature SYMBOL VCBO VCEX VCEO VEBO IC ICM IEM IBM Ptot** Tstg Tj BC856 80 80 65 Thermal Resistance From junction to tab From tab to soldering points From soldering points to ambient Rth(j-t) Rth(t-s) Rth(s-a)** **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm BC857 50 50 45 5 100 200 200 200 250 -55 to +150 150 60 280 90 BC858 30 30 30 UNITS V V V V mA mA mA mW oC oC K/W www.rectron.com 1 of 2 BC856 BC857 BC858 Electrical Characteristics (at Ta=25 oC unless otherwise specified) DESCRIPTION Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VBE(Sat)*** IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VCEK IC = 10mA, -IB = Value for which IC = 11mA at -VCE = 1V IC = 2mA, VCE = 5V BC856 hFE BC857/BC858 BC8...