purpose transistors. BC856 Datasheet

BC856 transistors. Datasheet pdf. Equivalent

BC856 Datasheet
Recommendation BC856 Datasheet
Part BC856
Description PNP general purpose transistors
Feature BC856; DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transis.
Manufacture Philips
Datasheet
Download BC856 Datasheet




Philips BC856
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC856; BC857
PNP general purpose transistors
Product specification
Supersedes data of 1997 Apr 17
1999 Apr 12



Philips BC856
Philips Semiconductors
PNP general purpose transistors
Product specification
BC856; BC857
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846 and BC847.
MARKING
TYPE
NUMBER
BC856
BC856A
BC856B
BC857
MARKING
CODE(1)
3D
3A
3B
3H
TYPE
NUMBER
BC857A
BC857B
BC857C
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
MARKING
CODE(1)
3E
3F
3G
handbook, halfpage
3
1
Top view
1
2
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC856
BC857
collector-emitter voltage
BC856
BC857
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Mounted on an FR4 printed-circuit board.
1999 Apr 12
2
MIN.
MAX.
UNIT
− −80 V
− −50 V
− −65 V
− −45 V
− −5 V
100
mA
200
mA
200
mA
250 mW
65
+150
°C
150 °C
65
+150
°C



Philips BC856
Philips Semiconductors
PNP general purpose transistors
Product specification
BC856; BC857
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
fT
F
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC856
BC857
BC856A; BC857A
BC856B; BC857B
BC857C
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 2 mA; VCE = 5 V;
see Figs 2, 3 and 4
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V; note 2
IC = 10 mA; VCE = 5 V; note 2
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V;
f = 100 MHz
IC = 200 µA; VCE = 5 V;
RS = 2 k; f = 1 kHz; B = 200 Hz
Notes
1. VBEsat decreases by about 1.7 m K/V with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
MIN.
125
125
125
220
420
600
100
TYP. MAX. UNIT
1 15 nA
− −4 µA
100 nA
75
250
700
850
650
4.5
475
800
250
475
800
300
650
750
820
mV
mV
mV
mV
mV
mV
pF
MHz
2 10 dB
1999 Apr 12
3







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