BC858A

BC858A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= -10mA, IE=0) Collector-emitter breakdown voltage (IC= -10mA, IB=0) Emitter-base breakdown voltage (IE= -10mA, IC=0) Collector cut-off current (VCB= -25V, IE=0) Collector cut-off current (VCE= -25V, IB=0) SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO Emitter cut-off current (VEB= -5V, IC=0) DC current gain (VCE= -5V, IC= -2mA) IEBO hFE(1) Collector-emitter saturation voltage (IC= -100mA, IB= -5mA) Base-emitter saturation voltage (IC= -100mA, IB= -10mA) Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ) DEVICE MARKING BC858A Notes: 1. Transistor mounted on an FR4 Printed-circuit board. 2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. VCE(sat) VBE(sat) fT SOT-23 COLLECTOR 3 BASE 1 2 EMITTER 0....