Schottky Rectifier. MBR30150PT Datasheet

MBR30150PT Rectifier. Datasheet pdf. Equivalent

MBR30150PT Datasheet
Recommendation MBR30150PT Datasheet
Part MBR30150PT
Description Power Schottky Rectifier
Feature MBR30150PT; ELECTRONIC MBR30150PT Power Schottky Rectifier - 30Amp 150Volt □ Features -Plastic package has Un.
Manufacture SIRECT
Datasheet
Download MBR30150PT Datasheet




SIRECT MBR30150PT
ELECTRONIC
MBR30150PT
Power Schottky Rectifier - 30Amp 150Volt
Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
-High Junction Temperature Capability
-Low forward voltage, high current capability
-High surge capacity
-Low power loss, high efficiency
-ESD performance human body mode > 6 KV
Application
-AC/DC Switching Adaptor and TFT-LCD Power Supply
-SMPS
Absolute maximum ratings
Symbol
IF(AV)
VRRM
IFSM
VF(max)
Tj
Tstg
Ratings
30
150
350
0.72
-50 to +175
-50 to +150
Unit Conditions
A Average Forward Current
Repetitive Peak Reverse
V
Voltage
A Peak Forward Surge Current
V Forward Voltage Drop
ºC Operating Temperature
ºC Storage Temperature
TO-247AD
L
C
F
E
B
DI
G
O
KK
A1
A2
H
M
J
N
A
K
Electrical characteristics
Parameters
Symbol Ratings
Maximum Instantaneous
Forward Voltage
VF
0.90V
0.72V
Maximum Reverse Leakage
Current
IR
0.01mA
10mA
Maximum Voltage Rate of
Change
dv/dt 10,000 V/μs
Typical Thermal Resistance,
Junction to Case
Rθ (j-c)
1.25 ºC/W
Note: Pulse Test : 380μs pulse width, 2% duty cycle
Conditions
Tc = 25ºC
Tc = 125ºC
Tc = 25ºC
Tc = 125ºC
Rated VR
Per diode
DIMENSIONS
INCHES
DIM MIN MAX
MM
MIN MAX
NOTE
A .748 .827 19.00 21.00
B .787 .866 20.00 22.00
C .598 .638 15.20 16.20
D .130 .150 3.30 3.80
E .205 .242 5.20 6.15
F .209 .232 5.30 5.90
G .077 .091 1.95 2.30
H .161 .189 4.10 4.80
I .551 .610 14.00 15.50
J .045 .055 1.15 1.40
K .197 .219 5.00 5.55
L .189 .205 4.80 5.20
M .020 .031 0.50 0.80
N .083 .094 2.10 2.40
O .116 .128 2.95 3.25
September 2008 / Rev.6.2
http:// www.sirectsemi.com
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SIRECT MBR30150PT
MBR30150PT
1000
100
TJ=175
TJ=125
TJ=25
10
100
TJ=175
10
TJ=150
1
TJ=125
0.1
TJ=100
0.01 TJ=75
0.001
TJ=50
0.0001
0
TJ=25
25 50
75 100 125 150
REVERSE VOLTAGE, VR(V)
Figure 2. Typical Values Of Reverse Current
Vs. Reverse Voltage (PerLeg)
1000
TJ=25
100
1
0 0.5 1 1.5 2 2.5
FORWARD VOLTAGE DROP, VFM(V)
Figure 1. Max. Forward Voltage Drop
Characteristics (PerLeg)
3
10
10
0
30 60 90 120 150
REVERSE VOLTAGE, VR(V)
Figure 3. Typical Junction Capacitance Vs.
Reverse Voltage (PerLeg)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1 D = 0.08
0.01
SINGLE PULSE
(THERMAL RESISTANCE)
PDM
t1
t2
Notes:
1.Duty factor D = t1 / t2
2.Peak Tj = PDM x ZthJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, RECTANGULAR PULSE DURATION (SECONDS)
10
Figure 4. Max. Thermal Impedance ZthJC Characteristics (PerLeg)
100
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SIRECT MBR30150PT
MBR30150PT
180
DC
160
140
Square wave(D = 0.50)
80% Rated Vr applied
120
16
D = 0.08
D = 0.17
D = 0.25
12 D = 0.33
D = 0.50
8
4
RMS LIMIT
DC
100
0
5 10 15 20 25
AVERAGE FORWARD CURRENT, IF(AV)
Figure 5. Max. Allowable Case Temperature
Vs. Average Forward Current (PerLeg)
0
0
5 10 15 20 25
AVERAGE FORWARD CURRENT, IF(AV)
Figure 6. Forward PowerLoss Characteristics
(PerLeg)
1000
AT ANY RATED LOAD CONDITION
AND WITH RATED VRRM APPLIED
FOLLOWING SURGE
100
10
100
1000
10000
SQUARE WAVE PULSE DURATION, TP(micro sec)
Figure 7. Max. Non-Repetitive Surge Current
(PerLeg)
Sirectifier Global Corp., Delaware, U.S.A.
U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com
China: st@sirectsemi.com Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com
http:// www.sirectsemi.com
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