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BZT55B3V6 Dataheets PDF



Part Number BZT55B3V6
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description SMD Zener Diode
Datasheet BZT55B3V6 DatasheetBZT55B3V6 Datasheet (PDF)

BZT55B2V4 ~ BZT55B75 Taiwan Semiconductor Small Signal Product 500mW , 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ±2% - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - All external surfaces are corrosion resistant and leads are readily solderable MECHANICAL DATA - Case: QUADRO Mini-MELF Package (JEDEC DO-213) - High temperature soldering guaranteed: 270oC/1.

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Document
BZT55B2V4 ~ BZT55B75 Taiwan Semiconductor Small Signal Product 500mW , 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ±2% - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - All external surfaces are corrosion resistant and leads are readily solderable MECHANICAL DATA - Case: QUADRO Mini-MELF Package (JEDEC DO-213) - High temperature soldering guaranteed: 270oC/10s - Polarity: Indicated by cathode band - Weight: 29 ± 2.5mg QUADRO Mini-MELF (LS34) Hermetically Sealed Glass MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Forward Voltage Thermal Resistance (Junction to Ambient) IF = 10 mA (Note 1) Junction and Storage Temperature Range Note1: Valid provided that electrodes are kept at ambient temperature PD VF RθJA TJ, TSTG 500 1 500 - 65 to + 175 UNIT mW V oC/W oC Zener I vs. V Characteristics VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current I ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM Document Number: DS_S1405002 Version: G14 Small Signal Product BZT55B2V4 ~ BZT55B75 Taiwan Semiconductor Electrical Characteristics (Ratings at TA=25oC ambient temperature unless otherwise specified) VF Forward Voltage = 1.0V Maximum @ IF = 10 mA for all part numbers Part Number Min VZ @ IZT (Volt) Nom Max IZT (mA) ZZT @ IZT (Ω) Max IZK (mA) ZZK @ IZK IR @ VR (Ω) (µA) Max Max BZT55B2V4 2.35 2.4 2.45 5 85 1 600 50 BZT55B2V7 2.65 2.7 2.75 5 85 1 600 10 BZT55B3V0 2.94 3.0 3.06 5 85 1 600 4 BZT55B3V3 3.23 3.3 3.37 5 85 1 600 2 BZT55B3V6 3.53 3.6 3.67 5 85 1 600 2 BZT55B3V9 3.82 3.9 3.98 5 85 1 600 2 BZT55B4V3 4.21 4.3 4.39 5 75 1 600 1 BZT55B4V7 4.61 4.7 4.79 5 60 1 600 0.5 BZT55B5V1 5.00 5.1 5.20 5 35 1 550 0.1 BZT55B5V6 5..49 5.6 5.71 5 25 1 450 0.1 BZT55B6V2 6.08 6.2 6.32 5 10 1 200 0.1 BZT55B6V8 6.66 6.8 6.94 58 1 150 0.1 BZT55B7V5 7.35 7.5 7.65 57 1 50 0.1 BZT55B8V2 8.04 8.2 8.36 57 1 50 0.1 BZT55B9V1 8.92 9.1 9.28 5 10 1 50 0.1 BZT55B10 9.80 10.0 10.20 5 15 1 70 0.1 BZT55B11 10.78 11.0 11.22 5 20 1 70 0.1 BZT55B12 11.76 12.0 12.24 5 20 1 90 0.1 BZT55B13 12.74 13.0 13.26 5 26 1 110 0.1 BZT55B15 14.70 15.0 15.30 5 30 1 110 0.1 BZT55B16 15.68 16.0 16.32 5 40 1 170 0.1 BZT55B18 17.64 18.0 18.36 5 50 1 170 0.1 BZT55B20 19.60 20.0 20.40 5 55 1 220 0.1 BZT55B22 21.56 22.0 22.44 5 55 1 220 0.1 BZT55B24 23.52 24.0 24.48 5 80 1 220 0.1 BZT55B27 26.46 27.0 27.54 5 80 1 220 0.1 BZT55B30 29.40 30.0 30.60 5 80 1 220 0.1 BZT55B33 32.34 33.0 33.66 5 80 1 220 0.1 BZT55B36 35.28 36.0 36.72 5 80 1 220 0.1 BZT55B39 38.22 39.0 39.78 2.5 90 0.5 500 0.1 BZT55B43 42.14 43.0 43.86 2.5 90 0.5 600 0.1 BZT55B47 46.06 47.0 47.94 2.5 110 0.5 700 0.1 BZT55B51 49.98 51.0 52.02 2.5 125 0.5 700 0.1 BZT55B56 54.88 56.0 57.12 2.5 135 0.5 1000 0.1 BZT55B62 60.76 62.0 63.24 2.5 150 0.5 1000 0.1 BZT55B68 66.64 68.0 69.36 2.5 160 0.5 1000 0.1 BZT55B75 73.50 75.0 76.50 2.5 170 0.5 1000 0.1 Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2% 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current(IZT or IZK) is superimposed to IZT or IZK. VR (V) 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 28 32 35 38 42 47 51 56 Document Number: DS_S1405002 Version: G14 Small Signal Product BZT55B2V4 ~ BZT55B75 Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES (BZT55B2V4 ~ BZT55B75) (TA=25℃ unless otherwise noted) 1000 100 Fig. 1 Typical Forward Characteristics TA=25oC Fig. 2 Zener Breakdown Characteristics 100 TA=25oC 10 1 Zener Current (mA) Forward Current (mA) 10 0.1 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Forward Voltage (V) 0.01 0 1 2 3 4 5 6 7 8 9 10 11 12 Zener Voltage (V) Zener Current (mA) Fig. 3 Zener Breakdown Characteristics 100 10 1 0.1 0.01 10 20 30 40 50 60 70 80 Zener Voltage (V) Power Dissipation (mW) 600 500 400 300 200 100 0 0 Fig. 4 Admissible Power Dissipation curve 40 80 120 160 Ambient Temperature (oC) 200 1000 Fig. 5 Typical Capacitance Capacitance (pF) 100 10 1 1 10 Zener Voltage (V) Document Number: DS_S1405002 100 Dynamic Impedence(Ohm) 1000 Fig. 6 Effect of Zener Voltage on Impedence 100 .


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