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Zener Diode. BZT55B11 Datasheet

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Zener Diode. BZT55B11 Datasheet






BZT55B11 Diode. Datasheet pdf. Equivalent




BZT55B11 Diode. Datasheet pdf. Equivalent





Part

BZT55B11

Description

SMD Zener Diode



Feature


BZT55B2V4 ~ BZT55B75 Taiwan Semiconducto r Small Signal Product 500mW , 2% Toler ance SMD Zener Diode FEATURES - Wide z ener voltage range selection: 2.4V to 7 5V - VZ Tolerance Selection of ±2% - M oisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel(Ni) underp late - Pb free and RoHS compliant - All external surfaces are corrosion resist ant and leads are r.
Manufacture

Taiwan Semiconductor

Datasheet
Download BZT55B11 Datasheet


Taiwan Semiconductor BZT55B11

BZT55B11; eadily solderable MECHANICAL DATA - Case : QUADRO Mini-MELF Package (JEDEC DO-21 3) - High temperature soldering guarant eed: 270oC/10s - Polarity: Indicated by cathode band - Weight: 29 ± 2.5mg QU ADRO Mini-MELF (LS34) Hermetically Seal ed Glass MAXIMUM RATINGS AND ELECTRICA L CHARACTERISTICS (TA=25℃ unless othe rwise noted) PARAMETER SYMBOL VALUE Power Dissipation F.


Taiwan Semiconductor BZT55B11

orward Voltage Thermal Resistance (Junct ion to Ambient) IF = 10 mA (Note 1) J unction and Storage Temperature Range Note1: Valid provided that electrodes a re kept at ambient temperature PD VF R θJA TJ, TSTG 500 1 500 - 65 to + 175 UNIT mW V oC/W oC Zener I vs. V Chara cteristics VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dyna mic impedance at IZ.


Taiwan Semiconductor BZT55B11

K IZT : Test current for voltage VZ VZ : Voltage at current I ZZT : Dynamic imp edance at IZT IZM : Maximum steady stat e current VZM : Voltage at IZM Documen t Number: DS_S1405002 Version: G14 Sm all Signal Product BZT55B2V4 ~ BZT55B7 5 Taiwan Semiconductor Electrical Char acteristics (Ratings at TA=25oC ambien t temperature unless otherwise specifie d) VF Forward Volt.

Part

BZT55B11

Description

SMD Zener Diode



Feature


BZT55B2V4 ~ BZT55B75 Taiwan Semiconducto r Small Signal Product 500mW , 2% Toler ance SMD Zener Diode FEATURES - Wide z ener voltage range selection: 2.4V to 7 5V - VZ Tolerance Selection of ±2% - M oisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel(Ni) underp late - Pb free and RoHS compliant - All external surfaces are corrosion resist ant and leads are r.
Manufacture

Taiwan Semiconductor

Datasheet
Download BZT55B11 Datasheet




 BZT55B11
BZT55B2V4 ~ BZT55B75
Taiwan Semiconductor
Small Signal Product
500mW , 2% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 75V
- VZ Tolerance Selection of ±2%
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- All external surfaces are corrosion resistant and
leads are readily solderable
MECHANICAL DATA
- Case: QUADRO Mini-MELF Package (JEDEC DO-213)
- High temperature soldering guaranteed: 270oC/10s
- Polarity: Indicated by cathode band
- Weight: 29 ± 2.5mg
QUADRO Mini-MELF (LS34)
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
IF = 10 mA
(Note 1)
Junction and Storage Temperature Range
Note1: Valid provided that electrodes are kept at ambient temperature
PD
VF
RθJA
TJ, TSTG
500
1
500
- 65 to + 175
UNIT
mW
V
oC/W
oC
Zener I vs. V Characteristics
VBR : Voltage at IZK
IZK : Test current for voltage VBR
ZZK : Dynamic impedance at IZK
IZT : Test current for voltage VZ
VZ : Voltage at current I
ZZT : Dynamic impedance at IZT
IZM : Maximum steady state current
VZM : Voltage at IZM
Document Number: DS_S1405002
Version: G14




 BZT55B11
Small Signal Product
BZT55B2V4 ~ BZT55B75
Taiwan Semiconductor
Electrical Characteristics
(Ratings at TA=25oC ambient temperature unless otherwise specified)
VF Forward Voltage = 1.0V Maximum @ IF = 10 mA for all part numbers
Part Number
Min
VZ @ IZT (Volt)
Nom
Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK IR @ VR
(Ω) (µA)
Max
Max
BZT55B2V4
2.35
2.4
2.45
5 85
1 600 50
BZT55B2V7
2.65
2.7
2.75
5 85
1 600 10
BZT55B3V0
2.94
3.0
3.06
5 85
1 600 4
BZT55B3V3
3.23
3.3
3.37
5 85
1 600 2
BZT55B3V6
3.53
3.6
3.67
5 85
1 600 2
BZT55B3V9
3.82
3.9
3.98
5 85
1 600 2
BZT55B4V3
4.21
4.3
4.39
5 75
1 600 1
BZT55B4V7
4.61
4.7
4.79
5 60
1 600 0.5
BZT55B5V1
5.00
5.1
5.20
5 35
1 550 0.1
BZT55B5V6
5..49
5.6
5.71
5 25
1 450 0.1
BZT55B6V2
6.08
6.2
6.32
5 10
1 200 0.1
BZT55B6V8
6.66
6.8
6.94
58
1 150 0.1
BZT55B7V5
7.35
7.5
7.65
57
1 50 0.1
BZT55B8V2
8.04
8.2
8.36
57
1 50 0.1
BZT55B9V1
8.92
9.1
9.28 5 10 1 50 0.1
BZT55B10
9.80
10.0
10.20
5 15 1 70 0.1
BZT55B11
10.78
11.0
11.22
5 20 1 70 0.1
BZT55B12
11.76
12.0
12.24
5 20 1 90 0.1
BZT55B13
12.74
13.0
13.26
5 26
1 110 0.1
BZT55B15
14.70
15.0
15.30
5 30
1 110 0.1
BZT55B16
15.68
16.0
16.32
5 40
1 170 0.1
BZT55B18
17.64
18.0
18.36
5 50
1 170 0.1
BZT55B20
19.60
20.0
20.40
5 55
1 220 0.1
BZT55B22
21.56
22.0
22.44
5 55
1 220 0.1
BZT55B24
23.52
24.0
24.48
5 80
1 220 0.1
BZT55B27
26.46
27.0
27.54
5 80
1 220 0.1
BZT55B30
29.40
30.0
30.60
5 80
1 220 0.1
BZT55B33
32.34
33.0
33.66
5 80
1 220 0.1
BZT55B36
35.28
36.0
36.72
5 80
1 220 0.1
BZT55B39
38.22
39.0
39.78
2.5 90
0.5 500 0.1
BZT55B43
42.14
43.0
43.86
2.5 90
0.5 600 0.1
BZT55B47
46.06
47.0
47.94
2.5 110 0.5 700 0.1
BZT55B51
49.98
51.0
52.02
2.5 125 0.5 700 0.1
BZT55B56
54.88
56.0
57.12
2.5 135
0.5 1000 0.1
BZT55B62
60.76
62.0
63.24
2.5 150
0.5 1000 0.1
BZT55B68
66.64
68.0
69.36
2.5 160
0.5 1000 0.1
BZT55B75
73.50
75.0
76.50
2.5 170
0.5 1000 0.1
Notes1. The Zener Voltage (VZ) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an
RMS value equal to 10% of the dc zener current(IZT or IZK) is superimposed to IZT or IZK.
VR
(V)
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
Document Number: DS_S1405002
Version: G14




 BZT55B11
Small Signal Product
BZT55B2V4 ~ BZT55B75
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES (BZT55B2V4 ~ BZT55B75)
(TA=25unless otherwise noted)
1000
100
Fig. 1 Typical Forward Characteristics
TA=25oC
Fig. 2 Zener Breakdown Characteristics
100
TA=25oC
10
1
10
0.1
1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Forward Voltage (V)
0.01
0 1 2 3 4 5 6 7 8 9 10 11 12
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
100
10
1
0.1
0.01
10 20 30 40 50 60 70 80
Zener Voltage (V)
600
500
400
300
200
100
0
0
Fig. 4 Admissible Power Dissipation curve
40 80 120 160
Ambient Temperature (oC)
200
1000
Fig. 5 Typical Capacitance
100
10
1
1
10
Zener Voltage (V)
Document Number: DS_S1405002
100
1000
Fig. 6 Effect of Zener Voltage on Impedence
100
10
1
1
IZ=5mA
IZ=20mA
10
Zener Voltage (V)
100
Version: G14






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