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BZT55B15 Dataheets PDF



Part Number BZT55B15
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators
Datasheet BZT55B15 DatasheetBZT55B15 Datasheet (PDF)

Pb RoHS COMPLIANCE BZT55B SERIES 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADRO MINI MELF Features — Zener voltage range 2.0 to 75 volts — Mini-MELF package — Surface device type mounting — Hermetically sealed glass — Compression Bonded Construction — All external surfaces are corrosion resistant and terminals are readily solderable — RoHS compliant — Matte Tin(Sn) lead finish — Blue color band indicates negative polarity Dimensions in inches and (millimeters) Maximum Ra.

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Pb RoHS COMPLIANCE BZT55B SERIES 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADRO MINI MELF Features — Zener voltage range 2.0 to 75 volts — Mini-MELF package — Surface device type mounting — Hermetically sealed glass — Compression Bonded Construction — All external surfaces are corrosion resistant and terminals are readily solderable — RoHS compliant — Matte Tin(Sn) lead finish — Blue color band indicates negative polarity Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Type Number Symbol Value Power Dissipation Ptot 500 Operating and Storage Temperature Range TJ, TSTG -65 to + 200 Notes: These ratings are limiting values above which the serviceability of the diode may be impaired Units mW oC Version: B07 RATINGS AND CHARACTERISTIC CURVES(BZT55B SERIES) TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) 600 500 400 300 200 100 0 0 40 80 120 160 200 Tamb - Ambient Temperature (°C) Figure 1. Total Power Dissipation vs. Ambient Temperature 1000 Tj = 25 °C 100 IZ = 5 mA 10 VZ - Voltage Change (mV) 1 0 5 10 15 20 25 V - Z-Voltage (V) Z Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C VZtn - Relative Voltage Change 1.3 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 1.0 0 - 2 x 10-4/K 0.9 - 4 x 10-4/K 0.8 - 60 0 60 120 180 240 Tj - Junction Temperature (°C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature 15 10 5 IZ = 5 mA 0 -5 0 10 20 30 40 50 VZ - Z-Voltage (V) Figure 4. Temperature Coefficient of Vz vs. Z-Voltage CD - Diode Capacitance (pF) 200 150 VR = 2 V 100 Tj = 25 °C 50 0 0 5 10 15 20 25 VZ - Z-Voltage (V) Figure 5. Diode Capacitance vs. Z-Voltage IF - Forward Current (mA) 100 10 Tj = 25 °C 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage Version: B07 RATINGS AND CHARACTERISTIC CURVES(BZT55B SERIES) 100 1000 rZ - Differential Z-Resistance (Ω) IZ - Z-Current (mA) 80 Ptot = 500 mW Tamb = 25 °C 60 40 20 0 0 4 6 8 12 VZ - Z-Voltage (V) Figure 7. Z-Current vs. Z-Voltage 20 IZ = 1 mA 100 5 mA 10 10 mA 1 Tj = 25 °C 0 5 10 15 20 25 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage IZ - Z-Current (mA) 50 40 Ptot = 500 mW T = 25 °C amb 30 20 10 0 15 20 25 30 VZ - Z-Voltage (V) Figure 8. Z-Current vs. Z-Voltage 35 Zthp - Thermal Resistance for Pulse Cond. (KW) 1000 tP/T = 0.5 100 tP/T = 0.2 10 tP/T = 0.1 tP/T = 0.01 tP/T = 0.02 tP/T = 0.05 1 10-1 100 Single Pulse RthJA = 300 K/W T=T -T jmax amb iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 101 102 tP - Pulse Length (ms) Figure 10. Thermal Response Version: B07 ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VZ @ IZT Type (Volts) ZZT @ IZT Number VZ VZ IZT Ohms IZK ZZK @ IZK Min (V) Max .


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