DatasheetsPDF.com

BZT55B75 Dataheets PDF



Part Number BZT55B75
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators
Datasheet BZT55B75 DatasheetBZT55B75 Datasheet (PDF)

Pb RoHS COMPLIANCE BZT55B SERIES 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADRO MINI MELF Features — Zener voltage range 2.0 to 75 volts — Mini-MELF package — Surface device type mounting — Hermetically sealed glass — Compression Bonded Construction — All external surfaces are corrosion resistant and terminals are readily solderable — RoHS compliant — Matte Tin(Sn) lead finish — Blue color band indicates negative polarity Dimensions in inches and (millimeters) Maximum Ra.

  BZT55B75   BZT55B75


Document
Pb RoHS COMPLIANCE BZT55B SERIES 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADRO MINI MELF Features — Zener voltage range 2.0 to 75 volts — Mini-MELF package — Surface device type mounting — Hermetically sealed glass — Compression Bonded Construction — All external surfaces are corrosion resistant and terminals are readily solderable — RoHS compliant — Matte Tin(Sn) lead finish — Blue color band indicates negative polarity Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Type Number Symbol Value Power Dissipation Ptot 500 Operating and Storage Temperature Range TJ, TSTG -65 to + 200 Notes: These ratings are limiting values above which the serviceability of the diode may be impaired Units mW oC Version: B07 RATINGS AND CHARACTERISTIC CURVES(BZT55B SERIES) TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) 600 500 400 300 200 100 0 0 40 80 120 160 200 Tamb - Ambient Temperature (°C) Figure 1. Total Power Dissipation vs. Ambient Temperature 1000 Tj = 25 °C 100 IZ = 5 mA 10 VZ - Voltage Change (mV) 1 0 5 10 15 20 25 V - Z-Voltage (V) Z Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C VZtn - Relative Voltage Change 1.3 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 1.0 0 - 2 x 10-4/K 0.9 - 4 x 10-4/K 0.8 - 60 0 60 120 180 240 Tj - Junction Temperature (°C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature 15 10 5 IZ = 5 mA 0 -5 0 10 20 30 40 50 VZ - Z-Voltage (V) Figure 4. Temperature Coefficient of Vz vs. Z-Voltage CD - Diode Capacitance (pF) 200 150 VR = 2 V 100 Tj = 25 °C 50 0 0 5 10 15 20 25 VZ - Z-Voltage (V) Figure 5. Diode Capacitance vs. Z-Voltage IF - Forward Current (mA) 100 10 Tj = 25 °C 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage Version: B07 RATINGS AND CHARACTERISTIC CURVES(BZT55B SERIES) 100 1000 rZ - Differential Z-Resistance (Ω) IZ - Z-Current (mA) 80 Ptot = 500 mW Tamb = 25 °C 60 40 20 0 0 4 6 8 12 VZ - Z-Voltage (V) Figure 7. Z-Current vs. Z-Voltage 20 IZ = 1 mA 100 5 mA 10 10 mA 1 Tj = 25 °C 0 5 10 15 20 25 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage IZ - Z-Current (mA) 50 40 Ptot = 500 mW T = 25 °C amb 30 20 10 0 15 20 25 30 VZ - Z-Voltage (V) Figure 8. Z-Current vs. Z-Voltage 35 Zthp - Thermal Resistance for Pulse Cond. (KW) 1000 tP/T = 0.5 100 tP/T = 0.2 10 tP/T = 0.1 tP/T = 0.01 tP/T = 0.02 tP/T = 0.05 1 10-1 100 Single Pulse RthJA = 300 K/W T=T -T jmax amb iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 101 102 tP - Pulse Length (ms) Figure 10. Thermal Response Version: B07 ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VZ @ IZT Type (Volts) ZZT @ IZT Number VZ VZ IZT Ohms IZK ZZK @ IZK Min (V) Max (V) mA Max mA Ohms BZT55B2V0 1.96 2.04 5 100 1.0 600 BZT55B2V2 2.16 2.24 5 100 1.0 600 BZT55B2V4 2.35 2.45 5 85 1.0 600 BZT55B2V7 2.65 2.75 5 85 1.0 600 BZT55B3V0 2.94 3.06 5 85 1.0 600 BZT55B3V3 3.23 3.37 5 85 1.0 600 BZT55B3V6 3.53 3.67 5 85 1.0 600 BZT55B3V9 3.82 3.98 5 85 1.0 600 BZT55B4V3 4.21 4.39 5 75 1.0 600 BZT55B4V7 4.61 4.79 5 60 1.0 600 BZT55B5V1 5.00 5.2 5 35 1.0 550 BZT55B5V6 5.49 5.71 5 25 1.0 450 BZT55B6V2 6.08 6.32 5 10 1.0 200 BZT55B6V8 6.66 6.94 5 8 1.0 150 BZT55B7V5 7.35 7.65 5 7 1.0 50 BZT55B8V2 8.04 8.36 5 7 1.0 50 BZT55B9V1 8.92 9.28 5 10 1.0 50 BZT55B10 9.80 10.2 5 15 1.0 70 BZT55B11 10.40 11.22 5 20 1.0 70 BZT55B12 11.40 12.24 5 20 1.0 90 BZT55B13 12.74 13.26 5 26 1.0 110 BZT55B15 14.70 15.30 5 30 1.0 110 BZT55B16 15.68 16.32 5 40 1.0 170 BZT55B18 17.64 18.36 5 50 1.0 170 BZT55B20 19.60 20.40 5 55 1.0 220 BZT55B22 21.56 22.44 5 55 1.0 220 BZT55B24 23.52 24.48 5 80 1.0 220 BZT55B27 26.46 27.54 2 80 1.0 220 BZT55B30 29.40 30.60 2 80 1.0 220 BZT55B33 32.34 33.66 2 80 1.0 220 BZT55B36 35.28 36.72 2 80 1.0 220 BZT55B39 38.22 39.78 2 90 0.5 500 BZT55B43 42.14 43.86 2 90 0.5 600 BZT55B47 46.06 47.94 2 110 0.5 700 BZT55B51 49.98 52.02 2 125 0.5 700 BZT55B56 54.88 57.12 2 135 0.5 1000 BZT55B62 60.76 63.24 2.5 150 0.5 1000 BZT55B68 66.64 69.36 2.5 160 0.5 1000 BZT55B75 73.50 76.50 2.5 170 0.5 1000 VF Forward Voltage = 1.0v Maximum @ IF=100mA for all types. IR @ VR uA Max 50 50 50 10 4 2 2 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 28 32 35 38 42 47 51 56 Notes: 1. The type numbers listed have zener voltage min/max limits as shown. 2.


BZT55B68 BZT55B75 BZT55C2V4


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)