2302

SOT-23-3 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHB MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage ±10 V ID Drain current -2.9 A PD Power Dissipation 1W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Trans conductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage Diode Forward Current Symbol V(BR)DSS Vth(GS) IGSS IDSS rDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Is Test conditions VGS=0V,ID=250uA VDS= VGS, ID=250 uA VDS=0V, VGS=±10V VDS=20V, VGS=0V VGS=2.5V, ID=2.5A VGS=4.5V, ID=2.9A VDS=5V, ID=2.9A VDS=10V, VGS=0V, f=1MHz VDD=10V, ID=1A, VGS=4.5V RGEN =10Ω VDS=10V, ID=3A, VGS=2.5V, VGS=0V, ID=1.3A MIN TYP MAX UNIT 20 V 0.4 0.7 1 V ±100 nA 1 uA 64 110 mΩ 89 140 mΩ 9.5 s 300 pF 120 80 10 50 17 10 4.0 0.65 1.2 15 nS 85 nS 45 nS 20 nS 10 nC nC nC 0.75 1.2 2.9 V A 1/2 Typical Characteristics 2302 2/2 ...