2SB1370(BR3CA1370F)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions TO-220F PNP 。Silicon PNP transistor in a TO-220F Plast...
2SB1370(BR3CA1370F)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions TO-220F
PNP 。Silicon
PNP transistor in a TO-220F Plastic Package.
/ Features ,。 Low saturation voltage, excellent DC current gain characteristics.
/ Applications 。 Audio frequency power amplifier applications.
/ Equivalent Circuit
/ Pinning
1 23
PIN1:Base
PIN 2:Collector
PIN 3:Emitter
/ hFE Classifications & Marking
hFE Classifications Symbol hFE Range
E 100~200
F 160~320
http://www.fsbrec.com
1/6
2SB1370(BR3CA1370F)
Rev.C Feb.-2015
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC ICP PC PC (Tc=25℃) Tj Tstg
Rating
-60 -60 -5.0 -3.0 -6.0 2.0 30 150 -55~150
Unit
V V V A A W W ℃
℃
/ Electrical Characteristics(Ta=25℃)
Parameter
Collector to Base Breakdown Voltage Collector to Base Breakdown Voltage
Emitter to Base Breakdown Voltage
Symbol
VCBO
VCEO VEBO
Test Conditions
IC=-50μA
IC=-1.0mA IE=-50μA
Min Typ Max Unit
-60 V
-60 V -5.0 V
Collector Cut-Off Current
ICBO VCB=-60V IE=0
-10 μA
Emitter Cut-Off Current
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
IEBO VEB=-4.0V VCE(sat) IC=-2.0A VBE(sat) IC=-2.0A
IC=0 IB=-200mA IB=-200mA
-10 μA -1.5 V -1.5 V
DC Current Gain Transitio...