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BR3CA1370F

BLUE ROCKET ELECTRONICS

Silicon PNP transistor

2SB1370(BR3CA1370F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F PNP 。Silicon PNP transistor in a TO-220F Plast...


BLUE ROCKET ELECTRONICS

BR3CA1370F

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Description
2SB1370(BR3CA1370F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package. / Features ,。 Low saturation voltage, excellent DC current gain characteristics. / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range E 100~200 F 160~320 http://www.fsbrec.com 1/6 2SB1370(BR3CA1370F) Rev.C Feb.-2015 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC PC (Tc=25℃) Tj Tstg Rating -60 -60 -5.0 -3.0 -6.0 2.0 30 150 -55~150 Unit V V V A A W W ℃ ℃ / Electrical Characteristics(Ta=25℃) Parameter Collector to Base Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Symbol VCBO VCEO VEBO Test Conditions IC=-50μA IC=-1.0mA IE=-50μA Min Typ Max Unit -60 V -60 V -5.0 V Collector Cut-Off Current ICBO VCB=-60V IE=0 -10 μA Emitter Cut-Off Current Collector to Emitter Saturation Voltage Base to Emitter Voltage IEBO VEB=-4.0V VCE(sat) IC=-2.0A VBE(sat) IC=-2.0A IC=0 IB=-200mA IB=-200mA -10 μA -1.5 V -1.5 V DC Current Gain Transitio...




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